INIS
layers
100%
deposition
100%
gallium nitrides
100%
x-ray photoelectron spectroscopy
100%
zirconium oxides
100%
applications
28%
bending
28%
surfaces
14%
semiconductor materials
14%
values
14%
mechanical properties
14%
thickness
14%
epitaxy
14%
tunneling
14%
dielectrics
14%
passivation
14%
crystal defects
14%
electrical properties
14%
thermal properties
14%
dielectric materials
14%
p-n junctions
14%
Engineering
Measurement
100%
Atomic Layer Deposition
100%
Ray Photoelectron Spectroscopy
100%
Band Bending
33%
Heterostructures
33%
Dielectrics
33%
Applications
33%
Passivation Layer
16%
Gate Dielectric
16%
Lattice Mismatch
16%
Great Importance
16%
Tunneling
16%
Semiconductor Type
16%
Thickness
16%
Properties
16%
Cycles
16%
Material Science
Photoemission Spectroscopy
100%
Zirconia
100%
Dielectric Material
33%
Heterojunction
33%
Bending
33%
Semiconductor Material
16%
Epitaxy
16%
Lattice Mismatch
16%
Surface Passivation
16%
Mechanical Property
16%
Electrical Property
16%
Thermal Property
16%