Abstract
Interface recombination was studied in colloidal quantum dot photovoltaics. Optimization of the TiO2 -PbS interface culminated in the introduction of a thin ZnO buffer layer deposited with atomic layer deposition. Transient photovoltage measurements indicated a nearly two-fold decrease in the recombination rate around 1 sun operating conditions. Improvement to the recombination rate led to a device architecture with superior open circuit voltage (VOC) and photocurrent extraction. Overall a 10% improvement in device efficiency was achieved with Voc enhancements up to 50 mV being realized. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 917-922 |
| Number of pages | 6 |
| Journal | Advanced Energy Materials |
| Volume | 3 |
| Issue number | 7 |
| DOIs | |
| State | Published - Mar 26 2013 |
| Externally published | Yes |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledged KAUST grant number(s): KUS-11-009-21
Acknowledgements: This publication is based, in part, on work supported by Award KUS-11-009-21, made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellence Program, and by the Natural Sciences and Engineering Research Council (NSERC) of Canada. K. W. K acknowledges support from the Ontario Graduate Scholarship (OGS) program. We thank Angstrom Engineering Inc., Cambridge Nanotech, and Innovative Technology Inc. for useful discussions regarding material deposition methods and control of the glovebox environment, respectively.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.