Abstract
Multilayer channel structure is used to effectively manipulate the threshold voltage of zinc oxide transistors without degrading its field-effect mobility. Transistors operating in enhancement mode with good mobility are fabricated by optimizing the structure of the multilayer channel. The optimization is attributed to the formation of additional channel and suppression of the diffusion of absorbed water molecules and oxygen vacancies.
Original language | English (US) |
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Pages (from-to) | 1600713 |
Journal | Advanced Materials Interfaces |
Volume | 3 |
Issue number | 24 |
DOIs | |
State | Published - Nov 29 2016 |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledgements: Research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST). The authors wish to thank Pradipta Nayak for some technical discussions, and core lab staff for their excellent support.