Interface broadening due to ion mixing during thin film growth at the radio-frequency-biased electrode in a plasma-enhanced chemical vapor deposition environment

A. Amassian*, M. Svec, P. Desjardins, L. Martinu

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Fingerprint

Dive into the research topics of 'Interface broadening due to ion mixing during thin film growth at the radio-frequency-biased electrode in a plasma-enhanced chemical vapor deposition environment'. Together they form a unique fingerprint.

Physics

Chemistry

Engineering

Material Science