Interdiffusion effect on quantum-well structures grown on GaSb substrate

Y. Wang, H. S. Djie, B. S. Ooi*, P. Rotella, P. Dowd, V. Aimez, Y. Cao, Y. H. Zhang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


We have modeled the effect of compositional interdiffusion on the optical properties of GaSb/AlGaSb and InGaAsSb/AlGaAsSb quantum-well structures grown on GaSb substrate. Blue shifts of emission wavelength as large as 270 nm and 700 nm are predicted from a 6 nm wide interdiffused GaSb/AlGaSb quantum-well for a diffusion length of 3 nm, and from a 10 nm wide interdiffused InGaAsSb/AlGaAsSb quantum-well for a diffusion length of 5 nm, respectively. The effects of the as-grown quantum-well width and applied electric field on the emission wavelength and their relationship to the interdiffusion are also investigated.

Original languageEnglish (US)
Pages (from-to)4352-4355
Number of pages4
JournalThin Solid Films
Issue number10
StatePublished - Mar 26 2007
Externally publishedYes


  • GaSb
  • Interdiffusion
  • Intermixing
  • Quantum-well

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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