Abstract
We have modeled the effect of compositional interdiffusion on the optical properties of GaSb/AlGaSb and InGaAsSb/AlGaAsSb quantum-well structures grown on GaSb substrate. Blue shifts of emission wavelength as large as 270 nm and 700 nm are predicted from a 6 nm wide interdiffused GaSb/AlGaSb quantum-well for a diffusion length of 3 nm, and from a 10 nm wide interdiffused InGaAsSb/AlGaAsSb quantum-well for a diffusion length of 5 nm, respectively. The effects of the as-grown quantum-well width and applied electric field on the emission wavelength and their relationship to the interdiffusion are also investigated.
Original language | English (US) |
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Pages (from-to) | 4352-4355 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 515 |
Issue number | 10 |
DOIs | |
State | Published - Mar 26 2007 |
Externally published | Yes |
Keywords
- GaSb
- Interdiffusion
- Intermixing
- Quantum-well
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry