Abstract
Enriching the functionality of ferroelectric materials with visible-light sensitivity and multiaxial switching capability would open up new opportunities for their applications in advanced information storage with diverse signal manipulation functions. We report experimental observations of robust intralayer ferroelectricity in two-dimensional (2D) van der Waals layered α-In2Se3 ultrathin flakes at room temperature. Distinct from other 2D and conventional ferroelectrics, In2Se3 exhibits intrinsically intercorrelated out-of-plane and in-plane polarization, where the reversal of the out-of-plane polarization by a vertical electric field also induces the rotation of the in-plane polarization. On the basis of the in-plane switchable diode effect and the narrow bandgap (∼1.3 eV) of ferroelectric In2Se3, a prototypical nonvolatile memory device, which can be manipulated both by electric field and visible light illumination, is demonstrated for advancing data storage technologies.
Original language | English (US) |
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Pages (from-to) | 1253-1258 |
Number of pages | 6 |
Journal | Nano Letters |
Volume | 18 |
Issue number | 2 |
DOIs | |
State | Published - Feb 14 2018 |
Bibliographical note
Publisher Copyright:© 2018 American Chemical Society.
Keywords
- 2D materials
- InSe
- ferroelectric
- semiconductor
- switchable diode
ASJC Scopus subject areas
- Bioengineering
- General Chemistry
- General Materials Science
- Condensed Matter Physics
- Mechanical Engineering