Integration process for photonic integrated circuits using plasma damage induced layer intermixing

B. S. Ooi; A. C. Bryce; J. H. Marsh

doi:10.1049/el:19950342

Integration process for photonic integrated circuits using plasma damage induced layer intermixing

B. S. Ooi, A. C. Bryce, J. H. Marsh

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

A. new quantum-well intermixing process in GaAs/AlGaAs structures, based on ion bombardment damage has been developed. Bandgap tuned lasers and extended cavity lasers have been fabricated. Results show that the quality of material is still high after intermixing. Losses as low as 18dB cm^-1 have been measured in the passive waveguides of the extended-cavity lasers.

Original language	English (US)
Pages (from-to)	449-451
Number of pages	3
Journal	Electronics Letters
Volume	31
Issue number	6
DOIs	https://doi.org/10.1049/el:19950342
State	Published - Mar 16 1995
Externally published	Yes

Keywords

Integrated circuits
Ion beam effects
Plasma techniques
Semiconductor Junction lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19950342

Cite this

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abstract = "A. new quantum-well intermixing process in GaAs/AlGaAs structures, based on ion bombardment damage has been developed. Bandgap tuned lasers and extended cavity lasers have been fabricated. Results show that the quality of material is still high after intermixing. Losses as low as 18dB cm-1 have been measured in the passive waveguides of the extended-cavity lasers.",

keywords = "Integrated circuits, Ion beam effects, Plasma techniques, Semiconductor Junction lasers",

author = "Ooi, {B. S.} and Bryce, {A. C.} and Marsh, {J. H.}",

year = "1995",

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AU - Ooi, B. S.

AU - Bryce, A. C.

AU - Marsh, J. H.

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Y1 - 1995/3/16

N2 - A. new quantum-well intermixing process in GaAs/AlGaAs structures, based on ion bombardment damage has been developed. Bandgap tuned lasers and extended cavity lasers have been fabricated. Results show that the quality of material is still high after intermixing. Losses as low as 18dB cm-1 have been measured in the passive waveguides of the extended-cavity lasers.

AB - A. new quantum-well intermixing process in GaAs/AlGaAs structures, based on ion bombardment damage has been developed. Bandgap tuned lasers and extended cavity lasers have been fabricated. Results show that the quality of material is still high after intermixing. Losses as low as 18dB cm-1 have been measured in the passive waveguides of the extended-cavity lasers.

KW - Integrated circuits

KW - Ion beam effects

KW - Plasma techniques

KW - Semiconductor Junction lasers

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JO - Electronics Letters

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ER -

Integration process for photonic integrated circuits using plasma damage induced layer intermixing

Abstract

Keywords

ASJC Scopus subject areas

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