Integration of iii-nitride nanowire on transparent conductive substrates for optoelectronic and electronic devices

Boon S. Ooi; Aditya Prabaswara; Bilal Janjua; Tien Khee Ng

Integration of iii-nitride nanowire on transparent conductive substrates for optoelectronic and electronic devices

Boon S. Ooi (Inventor), Aditya Prabaswara (Inventor), Bilal Janjua (Inventor), Tien Khee Ng (Inventor)

Research output: Patent

Abstract

A dislocation-free GaN/InGaN-based nanowires-LED epitaxially grown on a transparent, electrically conductive template substrate. The simultaneous transparency and conductivity are provided by a thin, translucent metal contact integrated with a quartz substrate. The light transmission properties of the translucent metal contact are tunable during epitaxial growth of the nanowires LED. Transparent light emitting diodes (LED) devices, optical circuits, solar cells, touch screen displays, and integrated photonic circuits can be implemented using the current platform.

Original language	English (US)
Patent number	US20180248077A1
State	Published - Aug 30 2018

Bibliographical note

KAUST Repository Item: Exported on 2019-02-13

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https://repository.kaust.edu.sa/bitstream/10754/629825/1/US20180248077A1.pdf

Cite this

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title = "Integration of iii-nitride nanowire on transparent conductive substrates for optoelectronic and electronic devices",

abstract = "A dislocation-free GaN/InGaN-based nanowires-LED epitaxially grown on a transparent, electrically conductive template substrate. The simultaneous transparency and conductivity are provided by a thin, translucent metal contact integrated with a quartz substrate. The light transmission properties of the translucent metal contact are tunable during epitaxial growth of the nanowires LED. Transparent light emitting diodes (LED) devices, optical circuits, solar cells, touch screen displays, and integrated photonic circuits can be implemented using the current platform.",

author = "Ooi, {Boon S.} and Aditya Prabaswara and Bilal Janjua and Ng, {Tien Khee}",

note = "KAUST Repository Item: Exported on 2019-02-13; US20180248077A1",

year = "2018",

month = aug,

day = "30",

language = "English (US)",

type = "Patent",

}

TY - PAT

T1 - Integration of iii-nitride nanowire on transparent conductive substrates for optoelectronic and electronic devices

AU - Ooi, Boon S.

AU - Prabaswara, Aditya

AU - Janjua, Bilal

AU - Ng, Tien Khee

N1 - KAUST Repository Item: Exported on 2019-02-13

PY - 2018/8/30

Y1 - 2018/8/30

N2 - A dislocation-free GaN/InGaN-based nanowires-LED epitaxially grown on a transparent, electrically conductive template substrate. The simultaneous transparency and conductivity are provided by a thin, translucent metal contact integrated with a quartz substrate. The light transmission properties of the translucent metal contact are tunable during epitaxial growth of the nanowires LED. Transparent light emitting diodes (LED) devices, optical circuits, solar cells, touch screen displays, and integrated photonic circuits can be implemented using the current platform.

AB - A dislocation-free GaN/InGaN-based nanowires-LED epitaxially grown on a transparent, electrically conductive template substrate. The simultaneous transparency and conductivity are provided by a thin, translucent metal contact integrated with a quartz substrate. The light transmission properties of the translucent metal contact are tunable during epitaxial growth of the nanowires LED. Transparent light emitting diodes (LED) devices, optical circuits, solar cells, touch screen displays, and integrated photonic circuits can be implemented using the current platform.

UR - http://hdl.handle.net/10754/629825

UR - https://patents.google.com/patent/US20180248077A1/en

M3 - Patent

M1 - US20180248077A1

ER -

Integration of iii-nitride nanowire on transparent conductive substrates for optoelectronic and electronic devices

Abstract

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