Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications

Jer-Chyi Wang, Kai-Ping Chang, Chih-Ting Lin, Ching-Yuan Su, Fethullah Güneş, Mohamed Boutchich, Chang-Hsiao Chen, Ching-Hsiang Chen, Ching-Shiun Chen, Lain-Jong Li, Chao-Sung Lai

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Graphene nanodiscs (GNDs), functionalized using NH3 plasma, as charge trapping sites (CTSs) for non-volatile memory applications have been investigated in this study. The fabrication process relies on the patterning of Au nanoparticles (Au-NPs), whose thicknesses are tuned to adjust the GND density and size upon etching. A GND density as high as 8 × 1011 cm−2 and a diameter of approximately 20 nm are achieved. The functionalization of GNDs by NH3 plasma creates Nsingle bondH+ functional groups that act as CTSs, as observed by Raman and Fourier transform infrared spectroscopy. This inherently enhances the density of CTSs in the GNDs, as a result, the memory window becomes more than 2.4 V and remains stable after 104 operating cycles. The charge loss is less than 10% for a 10-year data retention testing, making this low-temperature process suitable for low-cost non-volatile memory applications on flexible substrates.
Original languageEnglish (US)
Pages (from-to)318-324
Number of pages7
StatePublished - Nov 23 2016

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