Abstract
Graphene nanodiscs (GNDs), functionalized using NH3 plasma, as charge trapping sites (CTSs) for non-volatile memory applications have been investigated in this study. The fabrication process relies on the patterning of Au nanoparticles (Au-NPs), whose thicknesses are tuned to adjust the GND density and size upon etching. A GND density as high as 8 × 1011 cm−2 and a diameter of approximately 20 nm are achieved. The functionalization of GNDs by NH3 plasma creates Nsingle bondH+ functional groups that act as CTSs, as observed by Raman and Fourier transform infrared spectroscopy. This inherently enhances the density of CTSs in the GNDs, as a result, the memory window becomes more than 2.4 V and remains stable after 104 operating cycles. The charge loss is less than 10% for a 10-year data retention testing, making this low-temperature process suitable for low-cost non-volatile memory applications on flexible substrates.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 318-324 |
| Number of pages | 7 |
| Journal | Carbon |
| Volume | 113 |
| DOIs | |
| State | Published - Nov 23 2016 |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledgements: This research was supported by the Ministry of Science and Technology (MOST), R.O.C. under the Contract Nos. of MOST 103-2221-E-182-061-MY3, MOST 104-2221-E-182-041, MOST 104-2632-E-182-001, MOST 105-2628-E-182-001-MY3, and MOST 105-2632-E-182-001, and Chang Gung Memorial Hospital, R.O.C., under the Contract Nos. of CMRPD2D0072, CMRPD3D0112, CMRPD2E0031, CMRPD2F0121 and BMRPA74. MB and FG would like to thank the CNRS and the French Ministère des Affaires Etrangères et Européennes for their financial support through the ICT-ASIA programme (3226/DGM/ATT/RECH).