Integrated semiconductor optical amplifier and laser diode at visible wavelength

Boon S. Ooi; Chao Shen; Tien Khee Ng

Integrated semiconductor optical amplifier and laser diode at visible wavelength

Boon S. Ooi (Inventor), Chao Shen (Inventor), Tien Khee Ng (Inventor)

Research output: Patent

Abstract

An integrated semiconductor optical amplifier-laser diode (SOA-LD) device includes a laser diode (LD) section fabricated on a substrate, a semiconductor optical amplifier (SOA) section fabricated on the substrate adjacent to the LD section; and a trench formed at least partially between the LD section and SOA section to electrically isolate the LD section and the SOA section while maintaining optical coupling between the LD section and the SOA section.

Original language	English (US)
Patent number	WO2018096522A1
State	Published - May 31 2018

Bibliographical note

KAUST Repository Item: Exported on 2019-02-13

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https://repository.kaust.edu.sa/bitstream/10754/629663/1/WO2018096522A1.pdf

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@misc{5fad8f35a05c4a6aa84d73183f435003,

title = "Integrated semiconductor optical amplifier and laser diode at visible wavelength",

abstract = "An integrated semiconductor optical amplifier-laser diode (SOA-LD) device includes a laser diode (LD) section fabricated on a substrate, a semiconductor optical amplifier (SOA) section fabricated on the substrate adjacent to the LD section; and a trench formed at least partially between the LD section and SOA section to electrically isolate the LD section and the SOA section while maintaining optical coupling between the LD section and the SOA section.",

author = "Ooi, {Boon S.} and Chao Shen and Ng, {Tien Khee}",

note = "KAUST Repository Item: Exported on 2019-02-13; WO2018096522A1",

year = "2018",

month = may,

day = "31",

language = "English (US)",

type = "Patent",

}

TY - PAT

T1 - Integrated semiconductor optical amplifier and laser diode at visible wavelength

AU - Ooi, Boon S.

AU - Shen, Chao

AU - Ng, Tien Khee

N1 - KAUST Repository Item: Exported on 2019-02-13

PY - 2018/5/31

Y1 - 2018/5/31

N2 - An integrated semiconductor optical amplifier-laser diode (SOA-LD) device includes a laser diode (LD) section fabricated on a substrate, a semiconductor optical amplifier (SOA) section fabricated on the substrate adjacent to the LD section; and a trench formed at least partially between the LD section and SOA section to electrically isolate the LD section and the SOA section while maintaining optical coupling between the LD section and the SOA section.

AB - An integrated semiconductor optical amplifier-laser diode (SOA-LD) device includes a laser diode (LD) section fabricated on a substrate, a semiconductor optical amplifier (SOA) section fabricated on the substrate adjacent to the LD section; and a trench formed at least partially between the LD section and SOA section to electrically isolate the LD section and the SOA section while maintaining optical coupling between the LD section and the SOA section.

UR - http://hdl.handle.net/10754/629663

UR - https://patents.google.com/patent/WO2018096522A1/en

M3 - Patent

M1 - WO2018096522A1

ER -

Integrated semiconductor optical amplifier and laser diode at visible wavelength

Abstract

Bibliographical note

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