Abstract
The challenges to realizing III-nitride photonic integrated circuit (PIC) are discussed. Utilizing InGaN-based multi-section laser diode (LD) on semipolar GaN substrate, the seamless on-chip integration of III-nitride waveguide photodetector (WPD) in the visible regime has been demonstrated.
Original language | English (US) |
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Title of host publication | 2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 1-2 |
Number of pages | 2 |
ISBN (Electronic) | 9781509062904 |
DOIs | |
State | Published - Nov 22 2017 |
Event | 2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017 - Singapore, Singapore Duration: Jul 31 2017 → Aug 4 2017 |
Publication series
Name | 2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017 |
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Volume | 2017-January |
Conference
Conference | 2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017 |
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Country/Territory | Singapore |
City | Singapore |
Period | 07/31/17 → 08/4/17 |
Bibliographical note
Publisher Copyright:© 2017 IEEE.
Keywords
- Diode laser
- InGaN laser
- Photonic integration
- Semipoalr
- Visible lasers
- Visible light communication
- Waveguide photodetector
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Computer Networks and Communications