Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes

Chao Shen, Changmin Lee, Tien Khee Ng, James S. Speck, Shuji Nakamura, Steven P. DenBaars, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


The challenges to realizing III-nitride photonic integrated circuit (PIC) are discussed. Utilizing InGaN-based multi-section laser diode (LD) on semipolar GaN substrate, the seamless on-chip integration of III-nitride waveguide photodetector (WPD) in the visible regime has been demonstrated.
Original languageEnglish (US)
Title of host publication2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages2
ISBN (Print)9781509062904
StatePublished - Nov 30 2017

Bibliographical note

KAUST Repository Item: Exported on 2021-02-19
Acknowledged KAUST grant number(s): BAS/1/1614-01-01
Acknowledgements: We acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008, and KACST-KAUST-UCSB solid state lighting program (SSLP). This work is partially supported by baseline funding, BAS/1/1614-01-01, from the King Abdullah University of Science and Technology (KAUST).


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