Integrated memory devices based on two-dimensional materials

Fei Xue, Chenhui Zhang, Yinchang Ma, Yan Wen, Xin He, Fei Xue, Xixiang Zhang

Research output: Contribution to journalArticlepeer-review

41 Scopus citations

Abstract

With the advent of the Internet of Things and big data, massive data must be rapidly processed and stored within a short timeframe. This imposes stringent requirements on the memory hardware implementation in terms of operation speed, energy consumption, and integration density. To fulfil these demands, two-dimensional (2D) materials, which are excellent electronic building blocks, provide numerous possibilities for developing advanced memory device arrays with high performance, smart computing architectures, and desirable downscaling. Over the past few years, 2D material-based memory device arrays with different working mechanisms including defects, filaments, charges, ferroelectricity, and spins, have been increasingly developed. These arrays can be used to implement brain-inspired computing or sensing with extraordinary performance, architectures, and functionalities. In this review, we survey recent research into integrated, state-of-the-art memory devices made from 2D materials, as well as their implications for brain-inspired computing. We discuss the existing challenges at the array level, and present the scope for future research.
Original languageEnglish (US)
Pages (from-to)2201880
JournalAdvanced Materials
DOIs
StatePublished - May 12 2022

Bibliographical note

KAUST Repository Item: Exported on 2022-05-16
Acknowledged KAUST grant number(s): ORS-2018-CRG7-3717, ORS-2019-CRG8-4081
Acknowledgements: Supported by the King Abdullah University of Science and Technology(KAUST) Office of Sponsored Research (OSR) under award numbers: ORS-2019-CRG8-4081 and ORS-2018-CRG7-3717 and the ZJU-Hangzhou Global Scientific and Technological Innovation Centre.

ASJC Scopus subject areas

  • Mechanics of Materials
  • General Materials Science
  • Mechanical Engineering

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