Integrated decoupling capacitors using Pb(Zr,Ti)O3 thin films

D. Dimos*, S. J. Lockwood, T. J. Garino, H. N. Al-Shareef, R. W. Schwartz

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

12 Scopus citations


Thin-film decoupling capacitors based on ferroelectric (Pb,La)(Zr,Ti)O3 films are being developed for use in advanced packaging applications. The increased integration that can be achieved by replacing surface-mount capacitors should lead to decreased package volume and improved high-speed performance. For this application, chemical solution deposition is an appropriate fabrication technique since it is a low-cost, high-throughput process. The use of relatively thick Pt electrodes (approximately 1 μm) to minimize series resistance and inductance is a unique aspect to fabricating these devices. In addition, the important electrical properties are discussed, with particular emphasis on lifetime measurements, which suggest that resistance degradation will not be a severe limitation on device performance. Finally, some of the work being done to develop methods of integrating these thin-film capacitors with ICs and MCMs is presented.

Original languageEnglish (US)
Pages (from-to)305-316
Number of pages12
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 7 1996Apr 12 1996

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • General Materials Science


Dive into the research topics of 'Integrated decoupling capacitors using Pb(Zr,Ti)O3 thin films'. Together they form a unique fingerprint.

Cite this