Integrated circuits based on bilayer MoS 2 transistors

Han Wang*, Lili Yu, Yi Hsien Lee, Yumeng Shi, Allen Hsu, Matthew L. Chin, Lain Jong Li, Madan Dubey, Jing Kong, Tomas Palacios

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1542 Scopus citations


Two-dimensional (2D) materials, such as molybdenum disulfide (MoS 2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS 2 allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphene's advantages for electronic and optoelectronic applications. Discrete electronic and optoelectronic components, such as field-effect transistors, sensors, and photodetectors made from few-layer MoS 2 show promising performance as potential substitute of Si in conventional electronics and of organic and amorphous Si semiconductors in ubiquitous systems and display applications. An important next step is the fabrication of fully integrated multistage circuits and logic building blocks on MoS 2 to demonstrate its capability for complex digital logic and high-frequency ac applications. This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology. The circuits comprise between 2 to 12 transistors seamlessly integrated side-by-side on a single sheet of bilayer MoS 2. Both enhancement-mode and depletion-mode transistors were fabricated thanks to the use of gate metals with different work functions.

Original languageEnglish (US)
Pages (from-to)4674-4680
Number of pages7
JournalNano Letters
Issue number9
StatePublished - Sep 12 2012
Externally publishedYes


  • Molybdenum disulfide (MoS )
  • integrated circuits
  • ring oscillator
  • transition metal dichalcogenides (TMD)
  • two-dimensional (2D) electronics

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering


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