InN-based heterojunction photodetector with extended infrared response

Lung-Hsing Hsu; Chien-Ting Kuo; Jhih-Kai Huang; Shun-Chieh Hsu; Hsin-Ying Lee; Hao-Chung Kuo; Po-Tsung Lee; Yu-Lin Tsai; Yi-Chia Hwang; Chen-Feng Su; Jr-Hau He; Shih-Yen Lin; Yuh-Jen Cheng; Chien-Chung Lin

doi:10.1364/OE.23.031150

InN-based heterojunction photodetector with extended infrared response

Lung-Hsing Hsu, Chien-Ting Kuo, Jhih-Kai Huang, Shun-Chieh Hsu, Hsin-Ying Lee, Hao-Chung Kuo, Po-Tsung Lee, Yu-Lin Tsai, Yi-Chia Hwang, Chen-Feng Su, Jr-Hau He, Shih-Yen Lin, Yuh-Jen Cheng, Chien-Chung Lin

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24 Scopus citations

Abstract

© 2015 Optical Society of America. The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two nonradiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.

Original language	English (US)
Pages (from-to)	31150
Journal	Optics Express
Volume	23
Issue number	24
DOIs	https://doi.org/10.1364/OE.23.031150
State	Published - Nov 20 2015

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The work was supported by the National Science Council of Taiwan through the contracts: NSC 101-2221-E-009-046-MY3, MOST 104-2628-E-009-013-MY3, and NSC 102-3113-E-005-001.

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@article{5bf68890d8c34fc7a3774d318a308724,

title = "InN-based heterojunction photodetector with extended infrared response",

abstract = "{\textcopyright} 2015 Optical Society of America. The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two nonradiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.",

author = "Lung-Hsing Hsu and Chien-Ting Kuo and Jhih-Kai Huang and Shun-Chieh Hsu and Hsin-Ying Lee and Hao-Chung Kuo and Po-Tsung Lee and Yu-Lin Tsai and Yi-Chia Hwang and Chen-Feng Su and Jr-Hau He and Shih-Yen Lin and Yuh-Jen Cheng and Chien-Chung Lin",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The work was supported by the National Science Council of Taiwan through the contracts: NSC 101-2221-E-009-046-MY3, MOST 104-2628-E-009-013-MY3, and NSC 102-3113-E-005-001.",

year = "2015",

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doi = "10.1364/OE.23.031150",

language = "English (US)",

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journal = "Optics Express",

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TY - JOUR

T1 - InN-based heterojunction photodetector with extended infrared response

AU - Hsu, Lung-Hsing

AU - Kuo, Chien-Ting

AU - Huang, Jhih-Kai

AU - Hsu, Shun-Chieh

AU - Lee, Hsin-Ying

AU - Kuo, Hao-Chung

AU - Lee, Po-Tsung

AU - Tsai, Yu-Lin

AU - Hwang, Yi-Chia

AU - Su, Chen-Feng

AU - He, Jr-Hau

AU - Lin, Shih-Yen

AU - Cheng, Yuh-Jen

AU - Lin, Chien-Chung

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The work was supported by the National Science Council of Taiwan through the contracts: NSC 101-2221-E-009-046-MY3, MOST 104-2628-E-009-013-MY3, and NSC 102-3113-E-005-001.

PY - 2015/11/20

Y1 - 2015/11/20

N2 - © 2015 Optical Society of America. The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two nonradiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.

AB - © 2015 Optical Society of America. The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two nonradiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.

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U2 - 10.1364/OE.23.031150

DO - 10.1364/OE.23.031150

M3 - Article

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VL - 23

SP - 31150

JO - Optics Express

JF - Optics Express

IS - 24

ER -

InN-based heterojunction photodetector with extended infrared response

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