TY - JOUR
T1 - InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters
AU - Zhao, Chao
AU - Ng, Tien Khee
AU - Tseng, Chien-Chih
AU - Li, Jun
AU - Shi, Yumeng
AU - Wei, Nini
AU - Zhang, Daliang
AU - Consiglio, Giuseppe Bernardo
AU - Prabaswara, Aditya
AU - Alhamoud, Abdullah
AU - Albadri, Abdulrahman M.
AU - Alyamani, Ahmed Y.
AU - Zhang, Xixiang
AU - Li, Lain-Jong
AU - Ooi, Boon S.
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1614-01-01
Acknowledgements: The authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), and KAUST baseline funding (BAS/1/1614-01-01).
PY - 2017
Y1 - 2017
N2 - The recent study of a wide range of layered transition metal dichalcogenides (TMDCs) has created a new era for device design and applications. In particular, the concept of van der Waals epitaxy (vdWE) utilizing layered TMDCs has the potential to broaden the family of epitaxial growth techniques beyond the conventional methods. We report herein, for the first time, the monolithic high-power, droop-free, and wavelength tunable InGaN/GaN nanowire light-emitting diodes (NW-LEDs) on large-area MoS2 layers formed by sulfurizing entire Mo substrates. MoS2 serves as both a buffer layer for high-quality GaN nanowires growth and a sacrificial layer for epitaxy lift-off. The LEDs obtained on nitridated MoS2 via quasi vdWE show a low turn-on voltage of ∼2 V and light output power up to 1.5 mW emitting beyond the “green gap”, without an efficiency droop up to the current injection of 1 A (400 A cm−2), by virtue of high thermal and electrical conductivities of the metal substrates. The discovery of the nitride/layered TMDCs/metal heterostructure platform also ushers in the unparalleled opportunities of simultaneous high-quality nitrides growth for high-performance devices, ultralow-profile optoelectronics, energy harvesting, as well as substrate reusability for practical applications.
AB - The recent study of a wide range of layered transition metal dichalcogenides (TMDCs) has created a new era for device design and applications. In particular, the concept of van der Waals epitaxy (vdWE) utilizing layered TMDCs has the potential to broaden the family of epitaxial growth techniques beyond the conventional methods. We report herein, for the first time, the monolithic high-power, droop-free, and wavelength tunable InGaN/GaN nanowire light-emitting diodes (NW-LEDs) on large-area MoS2 layers formed by sulfurizing entire Mo substrates. MoS2 serves as both a buffer layer for high-quality GaN nanowires growth and a sacrificial layer for epitaxy lift-off. The LEDs obtained on nitridated MoS2 via quasi vdWE show a low turn-on voltage of ∼2 V and light output power up to 1.5 mW emitting beyond the “green gap”, without an efficiency droop up to the current injection of 1 A (400 A cm−2), by virtue of high thermal and electrical conductivities of the metal substrates. The discovery of the nitride/layered TMDCs/metal heterostructure platform also ushers in the unparalleled opportunities of simultaneous high-quality nitrides growth for high-performance devices, ultralow-profile optoelectronics, energy harvesting, as well as substrate reusability for practical applications.
UR - http://hdl.handle.net/10754/623665
UR - http://pubs.rsc.org/en/content/articlehtml/2017/RA/C7RA03590J
UR - http://www.scopus.com/inward/record.url?scp=85021654129&partnerID=8YFLogxK
U2 - 10.1039/C7RA03590J
DO - 10.1039/C7RA03590J
M3 - Article
SN - 2046-2069
VL - 7
SP - 26665
EP - 26672
JO - RSC Adv.
JF - RSC Adv.
IS - 43
ER -