InGaN/GaN nanowire LEDs and lasers

Chao Zhao; Tien Khee Ng; Shafat Jahangir; Thomas Frost; Pallab Bhattacharya; Boon S. Ooi

doi:10.1109/NUSOD.2016.7547051

InGaN/GaN nanowire LEDs and lasers

Chao Zhao, Tien Khee Ng, Shafat Jahangir, Thomas Frost, Pallab Bhattacharya, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

The large specific surface, and the associated high density of surface states was found to limit the light output power and quantum efficiency of nanowire-array devices, despite their potential for addressing the 'green-gap' and efficiency-droop issues. The phonon and carrier confinement in nanowires also led to junction heating, and reduced heat dissipation. In this paper, we will present our studies on effective surface states passivation in InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) and lasers grown on silicon (Si), as well as our recent work on nanowires LEDs grown on bulk-metal, a non-conventional substrate.

Original language	English (US)
Title of host publication	16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016
Editors	Martijn de Sterke, Christopher Poulton, Joachim Piprek, Michael Steel
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	103-104
Number of pages	2
ISBN (Electronic)	9781467386036
DOIs	https://doi.org/10.1109/NUSOD.2016.7547051
State	Published - Aug 17 2016
Event	16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016 - Sydney, Australia Duration: Jul 11 2016 → Jul 15 2016

Publication series

Name	16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016

Conference

Conference	16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016
Country/Territory	Australia
City	Sydney
Period	07/11/16 → 07/15/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Numerical Analysis
Modeling and Simulation

Access to Document

10.1109/NUSOD.2016.7547051

Cite this

Zhao, C., Ng, T. K., Jahangir, S., Frost, T., Bhattacharya, P., & Ooi, B. S. (2016). InGaN/GaN nanowire LEDs and lasers. In M. de Sterke, C. Poulton, J. Piprek, & M. Steel (Eds.), 16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016 (pp. 103-104). Article 7547051 (16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NUSOD.2016.7547051

Zhao, Chao ; Ng, Tien Khee ; Jahangir, Shafat et al. / InGaN/GaN nanowire LEDs and lasers. 16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016. editor / Martijn de Sterke ; Christopher Poulton ; Joachim Piprek ; Michael Steel. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 103-104 (16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016).

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title = "InGaN/GaN nanowire LEDs and lasers",

abstract = "The large specific surface, and the associated high density of surface states was found to limit the light output power and quantum efficiency of nanowire-array devices, despite their potential for addressing the 'green-gap' and efficiency-droop issues. The phonon and carrier confinement in nanowires also led to junction heating, and reduced heat dissipation. In this paper, we will present our studies on effective surface states passivation in InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) and lasers grown on silicon (Si), as well as our recent work on nanowires LEDs grown on bulk-metal, a non-conventional substrate.",

author = "Chao Zhao and Ng, {Tien Khee} and Shafat Jahangir and Thomas Frost and Pallab Bhattacharya and Ooi, {Boon S.}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016 ; Conference date: 11-07-2016 Through 15-07-2016",

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doi = "10.1109/NUSOD.2016.7547051",

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Zhao, C, Ng, TK, Jahangir, S, Frost, T, Bhattacharya, P & Ooi, BS 2016, InGaN/GaN nanowire LEDs and lasers. in M de Sterke, C Poulton, J Piprek & M Steel (eds), 16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016., 7547051, 16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016, Institute of Electrical and Electronics Engineers Inc., pp. 103-104, 16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016, Sydney, Australia, 07/11/16. https://doi.org/10.1109/NUSOD.2016.7547051

InGaN/GaN nanowire LEDs and lasers. / Zhao, Chao; Ng, Tien Khee; Jahangir, Shafat et al.
16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016. ed. / Martijn de Sterke; Christopher Poulton; Joachim Piprek; Michael Steel. Institute of Electrical and Electronics Engineers Inc., 2016. p. 103-104 7547051 (16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - The large specific surface, and the associated high density of surface states was found to limit the light output power and quantum efficiency of nanowire-array devices, despite their potential for addressing the 'green-gap' and efficiency-droop issues. The phonon and carrier confinement in nanowires also led to junction heating, and reduced heat dissipation. In this paper, we will present our studies on effective surface states passivation in InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) and lasers grown on silicon (Si), as well as our recent work on nanowires LEDs grown on bulk-metal, a non-conventional substrate.

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Zhao C, Ng TK, Jahangir S, Frost T, Bhattacharya P, Ooi BS. InGaN/GaN nanowire LEDs and lasers. In de Sterke M, Poulton C, Piprek J, Steel M, editors, 16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 103-104. 7547051. (16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016). doi: 10.1109/NUSOD.2016.7547051

InGaN/GaN nanowire LEDs and lasers

Abstract

Publication series

Conference

Bibliographical note

ASJC Scopus subject areas

Access to Document

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