TY - GEN
T1 - InGaN/GaN Nanowire LEDs and Lasers
AU - Zhao, Chao
AU - Ng, Tien Khee
AU - Jahangir, Shafat
AU - Frost, Thomas
AU - Bhattacharya, Pallab
AU - Ooi, Boon S.
N1 - KAUST Repository Item: Exported on 2021-02-19
PY - 2016/8/22
Y1 - 2016/8/22
N2 - The large specific surface, and the associated high density of surface states was found to limit the light output power and quantum efficiency of nanowire-array devices, despite their potential for addressing the “green-gap” and efficiency-droop issues. The phonon and carrier confinement in nanowires also led to junction heating, and reduced heat dissipation. In this paper, we will present our studies on effective surface states passivation in InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) and lasers grown on silicon (Si), as well as our recent work on nanowires LEDs grown on bulk-metal, a non-conventional substrate.
AB - The large specific surface, and the associated high density of surface states was found to limit the light output power and quantum efficiency of nanowire-array devices, despite their potential for addressing the “green-gap” and efficiency-droop issues. The phonon and carrier confinement in nanowires also led to junction heating, and reduced heat dissipation. In this paper, we will present our studies on effective surface states passivation in InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) and lasers grown on silicon (Si), as well as our recent work on nanowires LEDs grown on bulk-metal, a non-conventional substrate.
UR - http://hdl.handle.net/10754/606856
UR - http://ieeexplore.ieee.org/document/7547051/
UR - http://www.scopus.com/inward/record.url?scp=84987621264&partnerID=8YFLogxK
U2 - 10.1109/NUSOD.2016.7547051
DO - 10.1109/NUSOD.2016.7547051
M3 - Conference contribution
AN - SCOPUS:84987621264
SN - 9781467386036
SP - 103
EP - 104
BT - 2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
PB - IEEE
ER -