InGaN/GaN Nanowire LEDs and Lasers

Chao Zhao, Tien Khee Ng, Shafat Jahangir, Thomas Frost, Pallab Bhattacharya, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


The large specific surface, and the associated high density of surface states was found to limit the light output power and quantum efficiency of nanowire-array devices, despite their potential for addressing the “green-gap” and efficiency-droop issues. The phonon and carrier confinement in nanowires also led to junction heating, and reduced heat dissipation. In this paper, we will present our studies on effective surface states passivation in InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) and lasers grown on silicon (Si), as well as our recent work on nanowires LEDs grown on bulk-metal, a non-conventional substrate.
Original languageEnglish (US)
Title of host publication2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Number of pages2
ISBN (Print)9781467386036
StatePublished - Aug 22 2016

Bibliographical note

KAUST Repository Item: Exported on 2021-02-19


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