InGaN photocatalysts on conductive Ga2O3 substrates

Taro Ogita, Yusuke Uetake, Yoshihiro Yamashita, Akito Kuramata, Shigenobu Yamakoshi, Kazuhiro Ohkawa*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


We succeeded in hydrogen evolution using InGaN photocatalysts grown on conductive Ga2O3 substrates. These photocatalysts exhibited a conversion efficiency of 0.8% from incident light energy to stored H2 chemical energy. Their quantum efficiency was determined to be more than 1% at 404 nm by incident photon-to-current conversion efficiency (IPCE) measurement. We found that the wavelength response of the InGaN structure can be extended to the visible region. These results indicate that the conductive Ga2O3 substrates are suitable for the photocatalysts.

Original languageEnglish (US)
Pages (from-to)1029-1032
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number5
StatePublished - May 1 2015


  • GaO
  • InGaN
  • hydrogen
  • photocatalysis
  • substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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