TY - GEN
T1 - InGaN micro-LED-pillar as the building block for high brightness emitters
AU - Shen, Chao
AU - Cha, Dong Kyu
AU - Ng, Tien Khee
AU - Ooi, Boon S.
AU - Yang, Yang
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2013/11/11
Y1 - 2013/11/11
N2 - In summary, we confirmed the improved electrical and optical characteristics, with reduced efficiency droop in InGaN μLED-pillars when these devices were scaled down in size. We demonstrated that strain relief contributed to further improvement in EQE characteristics in small InGaN μLED-pillars (D < 50 μm), apart from the current spreading effect. The μLED-pillar can be deployed as the building block for large effective-area, high brightness emitter. © 2013 IEEE.
AB - In summary, we confirmed the improved electrical and optical characteristics, with reduced efficiency droop in InGaN μLED-pillars when these devices were scaled down in size. We demonstrated that strain relief contributed to further improvement in EQE characteristics in small InGaN μLED-pillars (D < 50 μm), apart from the current spreading effect. The μLED-pillar can be deployed as the building block for large effective-area, high brightness emitter. © 2013 IEEE.
UR - http://hdl.handle.net/10754/310642
UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6656491
UR - http://www.scopus.com/inward/record.url?scp=84892741930&partnerID=8YFLogxK
U2 - 10.1109/IPCon.2013.6656491
DO - 10.1109/IPCon.2013.6656491
M3 - Conference contribution
SN - 9781457715075
SP - 174
EP - 175
BT - 2013 IEEE Photonics Conference
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -