InGaN-based light-emitting diodes (LEDs) are efficient light sources in the blue-green light range and have been successfully commercialized in the last decades. Extending their spectral range to the red region causes a significant reduction in LED efficiency. This challenge hinders the integration of red, green, and blue LEDs based on III-nitride materials, especially for full-color micro-LED displays. We review our recent progress on InGaN-based red LEDs with different chip sizes from hundreds to tens of micrometers, including the epitaxial structures, device fabrication, and optical performance (peak wavelength, full-width at half-maximum, light output power, efficiency, temperature stability, and color coordinates.
|Original language||English (US)|
|Journal||Japanese Journal of Applied Physics|
|State||Published - Aug 2 2021|
Bibliographical noteKAUST Repository Item: Exported on 2021-08-05
Acknowledged KAUST grant number(s): BAS/1/1676-01-01
Acknowledgements: This work is supported by King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01).
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)