InGaN-based red light-emitting diodes: from traditional to micro-LEDs

Zhe Zhuang; Daisuke Iida; Kazuhiro Ohkawa

doi:10.35848/1347-4065/ac1a00

InGaN-based red light-emitting diodes: from traditional to micro-LEDs

Zhe Zhuang, Daisuke Iida, Kazuhiro Ohkawa

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

InGaN-based light-emitting diodes (LEDs) are efficient light sources in the blue-green light range and have been successfully commercialized in the last decades. Extending their spectral range to the red region causes a significant reduction in LED efficiency. This challenge hinders the integration of red, green, and blue LEDs based on III-nitride materials, especially for full-color micro-LED displays. We review our recent progress on InGaN-based red LEDs with different chip sizes from hundreds to tens of micrometers, including the epitaxial structures, device fabrication, and optical performance (peak wavelength, full-width at half-maximum, light output power, efficiency, temperature stability, and color coordinates.

Original language	English (US)
Journal	Japanese Journal of Applied Physics
DOIs	https://doi.org/10.35848/1347-4065/ac1a00
State	Published - Aug 2 2021

Bibliographical note

KAUST Repository Item: Exported on 2021-08-05
Acknowledged KAUST grant number(s): BAS/1/1676-01-01
Acknowledgements: This work is supported by King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.35848/1347-4065/ac1a00

https://repository.kaust.edu.sa/bitstream/10754/670408/1/Zhuang%2bet%2bal_2021_Jpn._J._Appl._Phys._10.35848_1347-4065_ac1a00.pdf

Cite this

@article{3da1d8f2e0d04960855f8bb99d18db86,

title = "InGaN-based red light-emitting diodes: from traditional to micro-LEDs",

abstract = "InGaN-based light-emitting diodes (LEDs) are efficient light sources in the blue-green light range and have been successfully commercialized in the last decades. Extending their spectral range to the red region causes a significant reduction in LED efficiency. This challenge hinders the integration of red, green, and blue LEDs based on III-nitride materials, especially for full-color micro-LED displays. We review our recent progress on InGaN-based red LEDs with different chip sizes from hundreds to tens of micrometers, including the epitaxial structures, device fabrication, and optical performance (peak wavelength, full-width at half-maximum, light output power, efficiency, temperature stability, and color coordinates.",

author = "Zhe Zhuang and Daisuke Iida and Kazuhiro Ohkawa",

note = "KAUST Repository Item: Exported on 2021-08-05 Acknowledged KAUST grant number(s): BAS/1/1676-01-01 Acknowledgements: This work is supported by King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01).",

year = "2021",

month = aug,

day = "2",

doi = "10.35848/1347-4065/ac1a00",

language = "English (US)",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

}

TY - JOUR

T1 - InGaN-based red light-emitting diodes: from traditional to micro-LEDs

AU - Zhuang, Zhe

AU - Iida, Daisuke

AU - Ohkawa, Kazuhiro

N1 - KAUST Repository Item: Exported on 2021-08-05 Acknowledged KAUST grant number(s): BAS/1/1676-01-01 Acknowledgements: This work is supported by King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01).

PY - 2021/8/2

Y1 - 2021/8/2

N2 - InGaN-based light-emitting diodes (LEDs) are efficient light sources in the blue-green light range and have been successfully commercialized in the last decades. Extending their spectral range to the red region causes a significant reduction in LED efficiency. This challenge hinders the integration of red, green, and blue LEDs based on III-nitride materials, especially for full-color micro-LED displays. We review our recent progress on InGaN-based red LEDs with different chip sizes from hundreds to tens of micrometers, including the epitaxial structures, device fabrication, and optical performance (peak wavelength, full-width at half-maximum, light output power, efficiency, temperature stability, and color coordinates.

AB - InGaN-based light-emitting diodes (LEDs) are efficient light sources in the blue-green light range and have been successfully commercialized in the last decades. Extending their spectral range to the red region causes a significant reduction in LED efficiency. This challenge hinders the integration of red, green, and blue LEDs based on III-nitride materials, especially for full-color micro-LED displays. We review our recent progress on InGaN-based red LEDs with different chip sizes from hundreds to tens of micrometers, including the epitaxial structures, device fabrication, and optical performance (peak wavelength, full-width at half-maximum, light output power, efficiency, temperature stability, and color coordinates.

UR - http://hdl.handle.net/10754/670408

UR - https://iopscience.iop.org/article/10.35848/1347-4065/ac1a00

U2 - 10.35848/1347-4065/ac1a00

DO - 10.35848/1347-4065/ac1a00

M3 - Article

SN - 0021-4922

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

ER -

InGaN-based red light-emitting diodes: from traditional to micro-LEDs

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this