TY - JOUR
T1 - InGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes
AU - Ou, Wei
AU - Mei, Yang
AU - Iida, Daisuke
AU - Xu, Huan
AU - Xie, Minchao
AU - Ying, Lei Ying
AU - Zhang, Baoping
AU - Ohkawa, Kazuhiro
AU - Wang, Yiwei
N1 - KAUST Repository Item: Exported on 2022-04-18
Acknowledgements: Funding Agency is the National Key Research and Development Program of China
PY - 2022/3/23
Y1 - 2022/3/23
N2 - InGaN-based orange-red resonant cavity light-emitting diodes (RCLEDs) were fabricated by using an AlN current-confinement aperture and double dielectric distributed Bragg reflectors (DBRs). For realizing the structure of device, a substrate transfer technique was employed in process of fabrication. The device exhibited optical resonant effect, a high Q factor (~3010), and a narrow emission linewidth (FMHW ~0.2 nm), indicating low optical loss in the resonant cavity. Additionally, due to the three-dimensional (3D) optical confinement effect, the discrete modes of red emission were clearly observed in the far field via an angular resolved measurement system. And then, the energies of the photon states of a orange-red RCLED consists generally with the simulation results based on a circular waveguide model. The saturated emission intensity of the orange-red RCLED was proportional to the area of current injection. This work demonstrated the feasibility of InGaN-based electrically injected orange-red RCLEDs that are useful for the development of displays and communication systems.
AB - InGaN-based orange-red resonant cavity light-emitting diodes (RCLEDs) were fabricated by using an AlN current-confinement aperture and double dielectric distributed Bragg reflectors (DBRs). For realizing the structure of device, a substrate transfer technique was employed in process of fabrication. The device exhibited optical resonant effect, a high Q factor (~3010), and a narrow emission linewidth (FMHW ~0.2 nm), indicating low optical loss in the resonant cavity. Additionally, due to the three-dimensional (3D) optical confinement effect, the discrete modes of red emission were clearly observed in the far field via an angular resolved measurement system. And then, the energies of the photon states of a orange-red RCLED consists generally with the simulation results based on a circular waveguide model. The saturated emission intensity of the orange-red RCLED was proportional to the area of current injection. This work demonstrated the feasibility of InGaN-based electrically injected orange-red RCLEDs that are useful for the development of displays and communication systems.
UR - http://hdl.handle.net/10754/676284
UR - https://ieeexplore.ieee.org/document/9740450/
UR - http://www.scopus.com/inward/record.url?scp=85127023326&partnerID=8YFLogxK
U2 - 10.1109/JLT.2022.3161637
DO - 10.1109/JLT.2022.3161637
M3 - Article
SN - 1558-2213
SP - 1
EP - 1
JO - Journal of Lightwave Technology
JF - Journal of Lightwave Technology
ER -