This Tutorial teaches the essential development of nitrogen-plasma-assisted molecular-beam-epitaxy grown InGaN nanowires as an application-inspired platform for energy harvesting and conversion applications by growing dislocation- and strain-relieved axial InGaN-based nanowires. The Tutorial aims to shed light on the interfacial, surface, electrical, and photoelectrochemical characteristics of InGaN nanowires through nanoscale and ultrafast characterizations. Understanding the interrelated optical-physical properties proved critical in the development of renewable-energy harvesting and energy conversion devices. Benefiting from their unique aspect ratio and surface-to-volume ratio, semiconductor properties, and piezoelectric properties, the group-III-nitride nanowires, especially InGaN nanowires, are promising for clean energy conversion applications, including piezotronic/piezo-phototronic and solar-to-clean-fuel energy-conversion.
Bibliographical noteKAUST Repository Item: Exported on 2021-03-29
Acknowledged KAUST grant number(s): BAS/1/ 1614-01-01
Acknowledgements: This work was supported by the King Abdullah University of Science and Technology (KAUST) baseline Funding No. BAS/1/ 1614-01-01. T.K.N., J.-W.M., and B.S.O. gratefully acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) under Grant No. KACST TIC R2-FP-008.
ASJC Scopus subject areas
- Physics and Astronomy(all)