InGaN-based green micro-LED efficiency enhancement by hydrogen passivation of the p-GaN sidewall

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16 Scopus citations

Abstract

We investigated the effect of the sidewall passivation by hydrogen plasma on the InGaN green micro-LED performance. Hydrogen passivation deactivates the surface region of p-GaN around the perimeter of the device mesa. Thus, hole injection is suppressed in this region, where etching-caused material degradation results in leakage current, decreasing device efficiency. We have confirmed the hydrogen passivation effect on LED square pixels with sizes of 20 and 100 μm. For smaller LEDs, the reverse leakage current has reduced more than tenfold, and the external quantum efficiency of LEDs was enhanced 1.4-times due to the suppression of the non-radiative recombination.
Original languageEnglish (US)
Pages (from-to)084003
JournalApplied Physics Express
Volume15
Issue number8
DOIs
StatePublished - Jul 25 2022

Bibliographical note

KAUST Repository Item: Exported on 2022-09-14
Acknowledged KAUST grant number(s): BAS/1/1676-01-01
Acknowledgements: This work was financially supported by King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01).

ASJC Scopus subject areas

  • General Physics and Astronomy
  • General Engineering

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