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InGaAs/GaAs quantum-dot intermixing using arsenic and phosphorus ion implantation-induced disordering
H. S. Djie,
B. S. Ooi
*
, V. Aimez
*
Corresponding author for this work
Research output
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Contribution to journal
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Article
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peer-review
7
Scopus citations
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Dive into the research topics of 'InGaAs/GaAs quantum-dot intermixing using arsenic and phosphorus ion implantation-induced disordering'. Together they form a unique fingerprint.
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Engineering
Gallium Arsenide
100%
Implantation
75%
Rapid Thermal Annealing
50%
Photonic Integration
25%
Low-Temperature
25%
Annealing
25%
Blueshift
25%
Induced Damage
25%
Temperature
25%
Diffusion
25%
Transients
25%
Implanted Sample
25%
Physics
Implantation
75%
Arsenic
50%
Ion
50%
Ion Implantation
50%
Impurities
25%
Annealing
25%
Diffusivity
25%
Blue Shift
25%
Temperature
25%
Transients
25%
Biochemistry, Genetics and Molecular Biology
Arsenic
50%
Sample
50%
Temperature
50%
Facilitated Diffusion
25%
Electric Potential
25%
Dose
25%
Material Science
Indium Gallium Arsenide
100%
Beryllium Ion
50%
Impurity
25%
Pharmacology, Toxicology and Pharmaceutical Science
Phosphorus
50%
Arsenic
50%