Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks

D. Maldonado; J. B. Roldan; A. M. Roldan; F. Jimenez-Molinos; F. Hui; Y. Shi; Xu Jing; C. Wen; M. Lanza

doi:10.1109/IRPS45951.2020.9128325

Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks

D. Maldonado, J. B. Roldan, A. M. Roldan, F. Jimenez-Molinos, F. Hui, Y. Shi, Xu Jing, C. Wen, M. Lanza

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Here we present a characterization study of Au/hBN/Au/Ti memristors when exposed to controlled magnetic field (MF) perpendicular to the device main vertical axis. The main switching parameters, i.e. set and reset voltages and currents, have been extracted and the influence of the MF on them (and on the resistive switching operation) has been analyzed. We observed that the set voltage values decrease with the MF, also the variability linked to the reset voltage is reduced. A similar effect is seen on the reset current, which shows a decrease due to the MF presence. These effects are linked to the reduction of the effective conductive filament section due to the influence of Lorentz force on the current lines.

Original language	English (US)
Title of host publication	IEEE International Reliability Physics Symposium Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781728131993
DOIs	https://doi.org/10.1109/IRPS45951.2020.9128325
State	Published - Apr 1 2020
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2021-03-16

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Maldonado, D., Roldan, J. B., Roldan, A. M., Jimenez-Molinos, F., Hui, F., Shi, Y., Jing, X., Wen, C., & Lanza, M. (2020). Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks. In IEEE International Reliability Physics Symposium Proceedings Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS45951.2020.9128325

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title = "Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks",

abstract = "Here we present a characterization study of Au/hBN/Au/Ti memristors when exposed to controlled magnetic field (MF) perpendicular to the device main vertical axis. The main switching parameters, i.e. set and reset voltages and currents, have been extracted and the influence of the MF on them (and on the resistive switching operation) has been analyzed. We observed that the set voltage values decrease with the MF, also the variability linked to the reset voltage is reduced. A similar effect is seen on the reset current, which shows a decrease due to the MF presence. These effects are linked to the reduction of the effective conductive filament section due to the influence of Lorentz force on the current lines.",

author = "D. Maldonado and Roldan, {J. B.} and Roldan, {A. M.} and F. Jimenez-Molinos and F. Hui and Y. Shi and Xu Jing and C. Wen and M. Lanza",

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doi = "10.1109/IRPS45951.2020.9128325",

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T1 - Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks

AU - Maldonado, D.

AU - Roldan, J. B.

AU - Roldan, A. M.

AU - Jimenez-Molinos, F.

AU - Hui, F.

AU - Shi, Y.

AU - Jing, Xu

AU - Wen, C.

AU - Lanza, M.

N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16

PY - 2020/4/1

Y1 - 2020/4/1

N2 - Here we present a characterization study of Au/hBN/Au/Ti memristors when exposed to controlled magnetic field (MF) perpendicular to the device main vertical axis. The main switching parameters, i.e. set and reset voltages and currents, have been extracted and the influence of the MF on them (and on the resistive switching operation) has been analyzed. We observed that the set voltage values decrease with the MF, also the variability linked to the reset voltage is reduced. A similar effect is seen on the reset current, which shows a decrease due to the MF presence. These effects are linked to the reduction of the effective conductive filament section due to the influence of Lorentz force on the current lines.

AB - Here we present a characterization study of Au/hBN/Au/Ti memristors when exposed to controlled magnetic field (MF) perpendicular to the device main vertical axis. The main switching parameters, i.e. set and reset voltages and currents, have been extracted and the influence of the MF on them (and on the resistive switching operation) has been analyzed. We observed that the set voltage values decrease with the MF, also the variability linked to the reset voltage is reduced. A similar effect is seen on the reset current, which shows a decrease due to the MF presence. These effects are linked to the reduction of the effective conductive filament section due to the influence of Lorentz force on the current lines.

UR - https://ieeexplore.ieee.org/document/9128325/

UR - http://www.scopus.com/inward/record.url?scp=85088369280&partnerID=8YFLogxK

U2 - 10.1109/IRPS45951.2020.9128325

DO - 10.1109/IRPS45951.2020.9128325

M3 - Conference contribution

SN - 9781728131993

BT - IEEE International Reliability Physics Symposium Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks

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