Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks

D. Maldonado, J. B. Roldan, A. M. Roldan, F. Jimenez-Molinos, F. Hui, Y. Shi, Xu Jing, C. Wen, M. Lanza

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Here we present a characterization study of Au/hBN/Au/Ti memristors when exposed to controlled magnetic field (MF) perpendicular to the device main vertical axis. The main switching parameters, i.e. set and reset voltages and currents, have been extracted and the influence of the MF on them (and on the resistive switching operation) has been analyzed. We observed that the set voltage values decrease with the MF, also the variability linked to the reset voltage is reduced. A similar effect is seen on the reset current, which shows a decrease due to the MF presence. These effects are linked to the reduction of the effective conductive filament section due to the influence of Lorentz force on the current lines.
Original languageEnglish (US)
Title of host publicationIEEE International Reliability Physics Symposium Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781728131993
StatePublished - Apr 1 2020
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2021-03-16


Dive into the research topics of 'Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks'. Together they form a unique fingerprint.

Cite this