Influence of the hole transport layer on the performance of organic light-emitting diodes

Carsten Giebeler; Homer Antoniadis; Donal D.C. Bradley; Yasuhiko Shirota

doi:10.1063/1.369413

Influence of the hole transport layer on the performance of organic light-emitting diodes

Carsten Giebeler, Homer Antoniadis, Donal D.C. Bradley, Yasuhiko Shirota

Research output: Contribution to journal › Article › peer-review

155 Scopus citations

Abstract

We investigate the influence of the hole-transporting layer (HTL) on the performance of bilayer vapor-deposited organic light-emitting diodes. Three different HTL materials were used: m-MTDATA, triphenyl-diamine, and naphthyl-phenyl-diamine. In all cases, Alq3 was the electron-transporting layer (ETL). We measure and compare the current density-voltage (J-V) and luminance-voltage (L-V) characteristics of these devices and we conclude that the operating voltage is controlled by the type of HTL used and the nature of the hole-injecting indium tin oxide/HTL interface. We found that the device quantum efficiency depends not only on the electron transport characteristics of the ETL but also on the energetics of the HTL/ETL interface. Analysis of the J-V characteristics suggests that current flow in bilayer devices cannot be described sufficiently by a single carrier theory; both hole and electron currents should be considered. © 1999 American Institute of Physics.

Original language	English (US)
Journal	Journal of Applied Physics
Volume	85
Issue number	1
DOIs	https://doi.org/10.1063/1.369413
State	Published - Dec 1 1999
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2019-11-27

Access to Document

10.1063/1.369413

Cite this

@article{2afd7d63659a464196d9b67d99fd9426,

title = "Influence of the hole transport layer on the performance of organic light-emitting diodes",

abstract = "We investigate the influence of the hole-transporting layer (HTL) on the performance of bilayer vapor-deposited organic light-emitting diodes. Three different HTL materials were used: m-MTDATA, triphenyl-diamine, and naphthyl-phenyl-diamine. In all cases, Alq3 was the electron-transporting layer (ETL). We measure and compare the current density-voltage (J-V) and luminance-voltage (L-V) characteristics of these devices and we conclude that the operating voltage is controlled by the type of HTL used and the nature of the hole-injecting indium tin oxide/HTL interface. We found that the device quantum efficiency depends not only on the electron transport characteristics of the ETL but also on the energetics of the HTL/ETL interface. Analysis of the J-V characteristics suggests that current flow in bilayer devices cannot be described sufficiently by a single carrier theory; both hole and electron currents should be considered. {\textcopyright} 1999 American Institute of Physics.",

author = "Carsten Giebeler and Homer Antoniadis and Bradley, {Donal D.C.} and Yasuhiko Shirota",

note = "Generated from Scopus record by KAUST IRTS on 2019-11-27",

year = "1999",

month = dec,

day = "1",

doi = "10.1063/1.369413",

language = "English (US)",

volume = "85",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Influence of the hole transport layer on the performance of organic light-emitting diodes

AU - Giebeler, Carsten

AU - Antoniadis, Homer

AU - Bradley, Donal D.C.

AU - Shirota, Yasuhiko

N1 - Generated from Scopus record by KAUST IRTS on 2019-11-27

PY - 1999/12/1

Y1 - 1999/12/1

N2 - We investigate the influence of the hole-transporting layer (HTL) on the performance of bilayer vapor-deposited organic light-emitting diodes. Three different HTL materials were used: m-MTDATA, triphenyl-diamine, and naphthyl-phenyl-diamine. In all cases, Alq3 was the electron-transporting layer (ETL). We measure and compare the current density-voltage (J-V) and luminance-voltage (L-V) characteristics of these devices and we conclude that the operating voltage is controlled by the type of HTL used and the nature of the hole-injecting indium tin oxide/HTL interface. We found that the device quantum efficiency depends not only on the electron transport characteristics of the ETL but also on the energetics of the HTL/ETL interface. Analysis of the J-V characteristics suggests that current flow in bilayer devices cannot be described sufficiently by a single carrier theory; both hole and electron currents should be considered. © 1999 American Institute of Physics.

AB - We investigate the influence of the hole-transporting layer (HTL) on the performance of bilayer vapor-deposited organic light-emitting diodes. Three different HTL materials were used: m-MTDATA, triphenyl-diamine, and naphthyl-phenyl-diamine. In all cases, Alq3 was the electron-transporting layer (ETL). We measure and compare the current density-voltage (J-V) and luminance-voltage (L-V) characteristics of these devices and we conclude that the operating voltage is controlled by the type of HTL used and the nature of the hole-injecting indium tin oxide/HTL interface. We found that the device quantum efficiency depends not only on the electron transport characteristics of the ETL but also on the energetics of the HTL/ETL interface. Analysis of the J-V characteristics suggests that current flow in bilayer devices cannot be described sufficiently by a single carrier theory; both hole and electron currents should be considered. © 1999 American Institute of Physics.

UR - http://aip.scitation.org/doi/10.1063/1.369413

UR - http://www.scopus.com/inward/record.url?scp=0032620903&partnerID=8YFLogxK

U2 - 10.1063/1.369413

DO - 10.1063/1.369413

M3 - Article

SN - 0021-8979

VL - 85

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -

Influence of the hole transport layer on the performance of organic light-emitting diodes

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this