Influence of polymer formation on metalorganic vapor-phase epitaxial growth of AlN

Takeshi Uchida, Kazuhide Kusakabe, Kazuhiro Ohkawa*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

39 Scopus citations


A modeling of reaction pathways in a TMAl/NH3/H2 system including parasitic and polymeric reactions for computational simulations was constructed to study temperature and pressure dependences of growth rates and gas-phase chemistry in metalorganic vapor-phase epitaxial growth of AlN. AlN growth rates calculated were in good agreement with experimental data. Reactive molecules such as MMAlNH and Al-N became the major gas-phase species at the high-temperature range. With increasing pressure, the polymerization of these species was enhanced and AlN growth rate significantly decreased.

Original languageEnglish (US)
Pages (from-to)133-140
Number of pages8
JournalJournal of Crystal Growth
Issue number1
StatePublished - Jun 1 2007
Externally publishedYes


  • A1. Computer simulation
  • A3. Metalorganic vapor-phase epitaxy
  • B1. AlN

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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