Influence of platinum interlayers on the electrical properties of RuO2/Pb(Zr0.53Ti0.47)O3/RuO 2 capacitor heterostructures

Husam Niman Alshareef*, K. R. Bellur, A. I. Kingon, O. Auciello

*Corresponding author for this work

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Lead zirconate titanate, Pb(ZrxTi1-x)O3 or PZT, thin films grown on RuO2 electrodes by the sol-gel process have excellent resistance to polarization fatigue, but they generally have two drawbacks. The films have high leakage currents and large property variation. In this letter we show that the use of a thin Pt layer (100 Å) deposited on the bottom RuO2 electrode to fabricate RuO2/PZT/Pt/RuO2/(100)MgO capacitors has two important effects. It reduces capacitor leakage by two to four orders of magnitude and it significantly reduces the large property variation. In addition, these capacitors retain their excellent resistance to polarization fatigue which is characteristic of the RuO2/PZT/RuO2 heterostructure.

Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
StatePublished - Dec 1 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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