Influence of intensive light exposure on polymer field-effect transistors

J. Ficker; H. Von Seggern; H. Rost; W. Fix; W. Clemens; I. McCulloch

doi:10.1063/1.1784547

Influence of intensive light exposure on polymer field-effect transistors

J. Ficker^*, H. Von Seggern, H. Rost, W. Fix, W. Clemens, I. McCulloch

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

The influence of intensive light exposure under ambient atmosphere on nonencapsulated high-performance polymer field-effect transistors containing regioregular semiconducting polymer was investigated. Electrical measurements using UV-Vis spectroscopy showed that the decrease of the field-effect mobility corresponds to a reduction of the conjugation within the semiconductor poly(3-alkylthiophene) (P3HT). The role of ambient air - oxygen in the degradation process was also investigated. The results of the IR spectrometry technique indicate that distinct changes in the chemical structure of regioregular P3HT under the influence of both intensive light exposure and the presence of oxygen.

Original language	English (US)
Pages (from-to)	1377-1379
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	8
DOIs	https://doi.org/10.1063/1.1784547
State	Published - Aug 23 2004
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1784547

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@article{945108d7ee1b4a1d833a656a9e825cea,

title = "Influence of intensive light exposure on polymer field-effect transistors",

abstract = "The influence of intensive light exposure under ambient atmosphere on nonencapsulated high-performance polymer field-effect transistors containing regioregular semiconducting polymer was investigated. Electrical measurements using UV-Vis spectroscopy showed that the decrease of the field-effect mobility corresponds to a reduction of the conjugation within the semiconductor poly(3-alkylthiophene) (P3HT). The role of ambient air - oxygen in the degradation process was also investigated. The results of the IR spectrometry technique indicate that distinct changes in the chemical structure of regioregular P3HT under the influence of both intensive light exposure and the presence of oxygen.",

author = "J. Ficker and {Von Seggern}, H. and H. Rost and W. Fix and W. Clemens and I. McCulloch",

year = "2004",

month = aug,

day = "23",

doi = "10.1063/1.1784547",

language = "English (US)",

volume = "85",

pages = "1377--1379",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "8",

}

TY - JOUR

T1 - Influence of intensive light exposure on polymer field-effect transistors

AU - Ficker, J.

AU - Von Seggern, H.

AU - Rost, H.

AU - Fix, W.

AU - Clemens, W.

AU - McCulloch, I.

PY - 2004/8/23

Y1 - 2004/8/23

N2 - The influence of intensive light exposure under ambient atmosphere on nonencapsulated high-performance polymer field-effect transistors containing regioregular semiconducting polymer was investigated. Electrical measurements using UV-Vis spectroscopy showed that the decrease of the field-effect mobility corresponds to a reduction of the conjugation within the semiconductor poly(3-alkylthiophene) (P3HT). The role of ambient air - oxygen in the degradation process was also investigated. The results of the IR spectrometry technique indicate that distinct changes in the chemical structure of regioregular P3HT under the influence of both intensive light exposure and the presence of oxygen.

AB - The influence of intensive light exposure under ambient atmosphere on nonencapsulated high-performance polymer field-effect transistors containing regioregular semiconducting polymer was investigated. Electrical measurements using UV-Vis spectroscopy showed that the decrease of the field-effect mobility corresponds to a reduction of the conjugation within the semiconductor poly(3-alkylthiophene) (P3HT). The role of ambient air - oxygen in the degradation process was also investigated. The results of the IR spectrometry technique indicate that distinct changes in the chemical structure of regioregular P3HT under the influence of both intensive light exposure and the presence of oxygen.

UR - http://www.scopus.com/inward/record.url?scp=4544324505&partnerID=8YFLogxK

U2 - 10.1063/1.1784547

DO - 10.1063/1.1784547

M3 - Article

AN - SCOPUS:4544324505

SN - 0003-6951

VL - 85

SP - 1377

EP - 1379

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Influence of intensive light exposure on polymer field-effect transistors

Abstract

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