Influence of argon and oxygen pressure ratio on bipolar-resistive switching characteristics of CeO2−x thin films deposited at room temperature

Muhammad Ismail; Rehmat Ullah; Riaz Hussain; Ijaz Talib; Anwar Manzoor Rana; Muhammad Mustafa Hussain; Khalid Mahmood; Fayyaz Hussain; Ejaz Ahmed; Dinghua Bao

doi:10.1007/s00339-017-1512-2

Influence of argon and oxygen pressure ratio on bipolar-resistive switching characteristics of CeO_2−x thin films deposited at room temperature

Muhammad Ismail^*, Rehmat Ullah, Riaz Hussain, Ijaz Talib, Anwar Manzoor Rana, Muhammad Mustafa Hussain, Khalid Mahmood, Fayyaz Hussain, Ejaz Ahmed, Dinghua Bao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Cerium oxide (CeO_2−x) film was deposited on Pt/Ti/SiO₂/Si substrate by rf magnetron sputtering at room temperature. Resistive switching characteristics of these ceria films have been improved by increasing oxygen content during deposition process. Endurance and statistical analyses indicate that the operating stability of CeO_2−x-based memory is highly dependent on the oxygen content. Results indicate that CeO_2−x film-based RRAM devices exhibit optimum performance when fabricated at an argon/oxygen ratio of 6:24. An increase in the oxygen content introduced during CeO_2−x film deposition not only stabilizes the conventional bipolar RS but also improves excellent switching uniformity such as large ON/OFF ratio (10²), excellent switching device-to-device uniformity and good sweep endurance over ~ 500 repeated RS cycles. Conduction in the low-resistance state (LRS) as well as in the low bias field region in the high-resistance state (HRS) is found to be Ohmic and thus supports the conductive filament (CF) theory. In the high voltage region of HRS, space charge limited conduction (SCLC) and Schottky emission are found to be the dominant conduction mechanisms. A feasible filamentary RS mechanism based on the movement of oxygen ions/vacancies under the bias voltage has been discussed.

Original language	English (US)
Article number	89
Journal	Applied Physics A: Materials Science and Processing
Volume	124
Issue number	2
DOIs	https://doi.org/10.1007/s00339-017-1512-2
State	Published - Feb 1 2018

Bibliographical note

Publisher Copyright:
© 2018, Springer-Verlag GmbH Germany, part of Springer Nature.

ASJC Scopus subject areas

General Chemistry
General Materials Science

Access to Document

10.1007/s00339-017-1512-2

Cite this

Ismail, M., Ullah, R., Hussain, R., Talib, I., Rana, A. M., Hussain, M. M., Mahmood, K., Hussain, F., Ahmed, E., & Bao, D. (2018). Influence of argon and oxygen pressure ratio on bipolar-resistive switching characteristics of CeO_2−x thin films deposited at room temperature. Applied Physics A: Materials Science and Processing, 124(2), Article 89. https://doi.org/10.1007/s00339-017-1512-2

@article{cbd78c8c43074cb881cdae7c4dd40262,

title = "Influence of argon and oxygen pressure ratio on bipolar-resistive switching characteristics of CeO2−x thin films deposited at room temperature",

abstract = "Cerium oxide (CeO2−x) film was deposited on Pt/Ti/SiO2/Si substrate by rf magnetron sputtering at room temperature. Resistive switching characteristics of these ceria films have been improved by increasing oxygen content during deposition process. Endurance and statistical analyses indicate that the operating stability of CeO2−x-based memory is highly dependent on the oxygen content. Results indicate that CeO2−x film-based RRAM devices exhibit optimum performance when fabricated at an argon/oxygen ratio of 6:24. An increase in the oxygen content introduced during CeO2−x film deposition not only stabilizes the conventional bipolar RS but also improves excellent switching uniformity such as large ON/OFF ratio (102), excellent switching device-to-device uniformity and good sweep endurance over ~ 500 repeated RS cycles. Conduction in the low-resistance state (LRS) as well as in the low bias field region in the high-resistance state (HRS) is found to be Ohmic and thus supports the conductive filament (CF) theory. In the high voltage region of HRS, space charge limited conduction (SCLC) and Schottky emission are found to be the dominant conduction mechanisms. A feasible filamentary RS mechanism based on the movement of oxygen ions/vacancies under the bias voltage has been discussed.",

author = "Muhammad Ismail and Rehmat Ullah and Riaz Hussain and Ijaz Talib and Rana, {Anwar Manzoor} and Hussain, {Muhammad Mustafa} and Khalid Mahmood and Fayyaz Hussain and Ejaz Ahmed and Dinghua Bao",

note = "Publisher Copyright: {\textcopyright} 2018, Springer-Verlag GmbH Germany, part of Springer Nature.",

year = "2018",

month = feb,

day = "1",

doi = "10.1007/s00339-017-1512-2",

language = "English (US)",

volume = "124",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Springer Heidelberg",

number = "2",

}

Ismail, M, Ullah, R, Hussain, R, Talib, I, Rana, AM, Hussain, MM, Mahmood, K, Hussain, F, Ahmed, E & Bao, D 2018, 'Influence of argon and oxygen pressure ratio on bipolar-resistive switching characteristics of CeO_2−x thin films deposited at room temperature', Applied Physics A: Materials Science and Processing, vol. 124, no. 2, 89. https://doi.org/10.1007/s00339-017-1512-2

TY - JOUR

T1 - Influence of argon and oxygen pressure ratio on bipolar-resistive switching characteristics of CeO2−x thin films deposited at room temperature

AU - Ismail, Muhammad

AU - Ullah, Rehmat

AU - Hussain, Riaz

AU - Talib, Ijaz

AU - Rana, Anwar Manzoor

AU - Hussain, Muhammad Mustafa

AU - Mahmood, Khalid

AU - Hussain, Fayyaz

AU - Ahmed, Ejaz

AU - Bao, Dinghua

PY - 2018/2/1

Y1 - 2018/2/1

N2 - Cerium oxide (CeO2−x) film was deposited on Pt/Ti/SiO2/Si substrate by rf magnetron sputtering at room temperature. Resistive switching characteristics of these ceria films have been improved by increasing oxygen content during deposition process. Endurance and statistical analyses indicate that the operating stability of CeO2−x-based memory is highly dependent on the oxygen content. Results indicate that CeO2−x film-based RRAM devices exhibit optimum performance when fabricated at an argon/oxygen ratio of 6:24. An increase in the oxygen content introduced during CeO2−x film deposition not only stabilizes the conventional bipolar RS but also improves excellent switching uniformity such as large ON/OFF ratio (102), excellent switching device-to-device uniformity and good sweep endurance over ~ 500 repeated RS cycles. Conduction in the low-resistance state (LRS) as well as in the low bias field region in the high-resistance state (HRS) is found to be Ohmic and thus supports the conductive filament (CF) theory. In the high voltage region of HRS, space charge limited conduction (SCLC) and Schottky emission are found to be the dominant conduction mechanisms. A feasible filamentary RS mechanism based on the movement of oxygen ions/vacancies under the bias voltage has been discussed.

AB - Cerium oxide (CeO2−x) film was deposited on Pt/Ti/SiO2/Si substrate by rf magnetron sputtering at room temperature. Resistive switching characteristics of these ceria films have been improved by increasing oxygen content during deposition process. Endurance and statistical analyses indicate that the operating stability of CeO2−x-based memory is highly dependent on the oxygen content. Results indicate that CeO2−x film-based RRAM devices exhibit optimum performance when fabricated at an argon/oxygen ratio of 6:24. An increase in the oxygen content introduced during CeO2−x film deposition not only stabilizes the conventional bipolar RS but also improves excellent switching uniformity such as large ON/OFF ratio (102), excellent switching device-to-device uniformity and good sweep endurance over ~ 500 repeated RS cycles. Conduction in the low-resistance state (LRS) as well as in the low bias field region in the high-resistance state (HRS) is found to be Ohmic and thus supports the conductive filament (CF) theory. In the high voltage region of HRS, space charge limited conduction (SCLC) and Schottky emission are found to be the dominant conduction mechanisms. A feasible filamentary RS mechanism based on the movement of oxygen ions/vacancies under the bias voltage has been discussed.

UR - http://www.scopus.com/inward/record.url?scp=85040311790&partnerID=8YFLogxK

U2 - 10.1007/s00339-017-1512-2

DO - 10.1007/s00339-017-1512-2

M3 - Article

AN - SCOPUS:85040311790

SN - 0947-8396

VL - 124

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 2

M1 - 89

ER -