Influence of AIN layers on the interface stability of HfO 2 gate dielectric stacks

Melody P. Agustin; Husam Alshareef; Manuel A. Quevedo-Lopez; Susanne Stemmer

doi:10.1063/1.2236264

Influence of AIN layers on the interface stability of HfO ₂ gate dielectric stacks

Melody P. Agustin^*, Husam Alshareef, Manuel A. Quevedo-Lopez, Susanne Stemmer

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The influence of thick (∼10 nm) AlN overlayers on the interface structure and reactions in Si gate stacks with HfO ₂ dielectrics was investigated. Annealing caused a reduction of the interfacial SiO ₂ at the Si interface. At high temperatures (∼1000 °C) a silicide reaction was observed at the HfO ₂/Si interface. No reactions were observed for stacks processed similarly but with WN or TiN overlayers instead of AlN. The reaction mechanisms, in particular, the role of oxygen deficiency of the HfO ₂, and the consequences for the electrical properties are discussed.

Original language	English (US)
Article number	041906
Journal	Applied Physics Letters
Volume	89
Issue number	4
DOIs	https://doi.org/10.1063/1.2236264
State	Published - 2006
Externally published	Yes

Bibliographical note

Funding Information:
This research was supported by the SRC/SEMATECH Front End Processing Center. The authors thank Dr. Jiwei Lu and Sean Keane for the RTA and Dr. Steffen Schmidt for help with the TEM sample preparation. One of the authors (M.P.A.) would also like to acknowledge SRCEA/Intel for a fellowship.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2236264

Cite this

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title = "Influence of AIN layers on the interface stability of HfO 2 gate dielectric stacks",

abstract = "The influence of thick (∼10 nm) AlN overlayers on the interface structure and reactions in Si gate stacks with HfO 2 dielectrics was investigated. Annealing caused a reduction of the interfacial SiO 2 at the Si interface. At high temperatures (∼1000 °C) a silicide reaction was observed at the HfO 2/Si interface. No reactions were observed for stacks processed similarly but with WN or TiN overlayers instead of AlN. The reaction mechanisms, in particular, the role of oxygen deficiency of the HfO 2, and the consequences for the electrical properties are discussed.",

author = "Agustin, {Melody P.} and Husam Alshareef and Quevedo-Lopez, {Manuel A.} and Susanne Stemmer",

note = "Funding Information: This research was supported by the SRC/SEMATECH Front End Processing Center. The authors thank Dr. Jiwei Lu and Sean Keane for the RTA and Dr. Steffen Schmidt for help with the TEM sample preparation. One of the authors (M.P.A.) would also like to acknowledge SRCEA/Intel for a fellowship.",

year = "2006",

doi = "10.1063/1.2236264",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

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T1 - Influence of AIN layers on the interface stability of HfO 2 gate dielectric stacks

AU - Agustin, Melody P.

AU - Alshareef, Husam

AU - Quevedo-Lopez, Manuel A.

AU - Stemmer, Susanne

N1 - Funding Information: This research was supported by the SRC/SEMATECH Front End Processing Center. The authors thank Dr. Jiwei Lu and Sean Keane for the RTA and Dr. Steffen Schmidt for help with the TEM sample preparation. One of the authors (M.P.A.) would also like to acknowledge SRCEA/Intel for a fellowship.

PY - 2006

Y1 - 2006

N2 - The influence of thick (∼10 nm) AlN overlayers on the interface structure and reactions in Si gate stacks with HfO 2 dielectrics was investigated. Annealing caused a reduction of the interfacial SiO 2 at the Si interface. At high temperatures (∼1000 °C) a silicide reaction was observed at the HfO 2/Si interface. No reactions were observed for stacks processed similarly but with WN or TiN overlayers instead of AlN. The reaction mechanisms, in particular, the role of oxygen deficiency of the HfO 2, and the consequences for the electrical properties are discussed.

AB - The influence of thick (∼10 nm) AlN overlayers on the interface structure and reactions in Si gate stacks with HfO 2 dielectrics was investigated. Annealing caused a reduction of the interfacial SiO 2 at the Si interface. At high temperatures (∼1000 °C) a silicide reaction was observed at the HfO 2/Si interface. No reactions were observed for stacks processed similarly but with WN or TiN overlayers instead of AlN. The reaction mechanisms, in particular, the role of oxygen deficiency of the HfO 2, and the consequences for the electrical properties are discussed.

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