Influence of AIN layers on the interface stability of HfO 2 gate dielectric stacks

Melody P. Agustin*, Husam Alshareef, Manuel A. Quevedo-Lopez, Susanne Stemmer

*Corresponding author for this work

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The influence of thick (∼10 nm) AlN overlayers on the interface structure and reactions in Si gate stacks with HfO 2 dielectrics was investigated. Annealing caused a reduction of the interfacial SiO 2 at the Si interface. At high temperatures (∼1000 °C) a silicide reaction was observed at the HfO 2/Si interface. No reactions were observed for stacks processed similarly but with WN or TiN overlayers instead of AlN. The reaction mechanisms, in particular, the role of oxygen deficiency of the HfO 2, and the consequences for the electrical properties are discussed.

Original languageEnglish (US)
Article number041906
JournalApplied Physics Letters
Issue number4
StatePublished - Aug 4 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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