TY - JOUR
T1 - Indole-substituted nickel dithiolene complexes in electronic and optoelectronic devices
AU - Dalgleish, Simon
AU - Labram, John G.
AU - Li, Zhe
AU - Wang, Jianpu
AU - McNeill, Christopher R.
AU - Anthopoulos, Thomas D.
AU - Greenham, Neil C.
AU - Robertson, Neil
PY - 2011/10/21
Y1 - 2011/10/21
N2 - The synthesis and full characterisation of a novel indole-substituted nickel dithiolene [Ni(mi-5edt)2] (3) is reported, and compared to its alkyl-substituted analogue [Ni(mi-5hdt)2] (4) that has been previously communicated [Dalgleish et al., Chem. Commun., 2009, 5826] [mi-5edt = 1-(N-methylindol-5-yl)-ethene-1,2-dithiolate; mi-5hdt = 1-(N-methylindol-5-yl)- hex-1-ene-1,2-dithiolate)]. Both complexes are shown to undergo oxidative electropolymerisation, yielding polymer films that retain the redox and optical properties of the monomer. The more soluble analogue 4 is shown to form high quality thin films by spin coating, which have been utilised to fabricate field-effect transistors (FETs) and bulk heterojunction photovoltaic devices (BHJ-PVs). From FET studies, the material shows ambipolar charge transport behaviour, with a maximum carrier mobility of ∼10-6 cm 2 V-1 s-1 for electrons. By using 4 simultaneously as the electron acceptor as well as a NIR sensitiser in BHJ-PVs, the complex is shown to contribute to the photocurrent, extending light harvesting into the NIR region.
AB - The synthesis and full characterisation of a novel indole-substituted nickel dithiolene [Ni(mi-5edt)2] (3) is reported, and compared to its alkyl-substituted analogue [Ni(mi-5hdt)2] (4) that has been previously communicated [Dalgleish et al., Chem. Commun., 2009, 5826] [mi-5edt = 1-(N-methylindol-5-yl)-ethene-1,2-dithiolate; mi-5hdt = 1-(N-methylindol-5-yl)- hex-1-ene-1,2-dithiolate)]. Both complexes are shown to undergo oxidative electropolymerisation, yielding polymer films that retain the redox and optical properties of the monomer. The more soluble analogue 4 is shown to form high quality thin films by spin coating, which have been utilised to fabricate field-effect transistors (FETs) and bulk heterojunction photovoltaic devices (BHJ-PVs). From FET studies, the material shows ambipolar charge transport behaviour, with a maximum carrier mobility of ∼10-6 cm 2 V-1 s-1 for electrons. By using 4 simultaneously as the electron acceptor as well as a NIR sensitiser in BHJ-PVs, the complex is shown to contribute to the photocurrent, extending light harvesting into the NIR region.
UR - http://www.scopus.com/inward/record.url?scp=80053315956&partnerID=8YFLogxK
U2 - 10.1039/c1jm12466h
DO - 10.1039/c1jm12466h
M3 - Article
AN - SCOPUS:80053315956
SN - 0959-9428
VL - 21
SP - 15422
EP - 15430
JO - Journal of Materials Chemistry
JF - Journal of Materials Chemistry
IS - 39
ER -
