Indium-Free Fully Transparent Electronics Deposited Entirely by Atomic Layer Deposition

Pradipta K. Nayak; Zhenwei Wang; Husam N. Alshareef

doi:10.1002/adma.201600503

Indium-Free Fully Transparent Electronics Deposited Entirely by Atomic Layer Deposition

Pradipta K. Nayak, Zhenwei Wang, Husam N. Alshareef

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

Indium-free, fully transparent thin-film transistors are fabricated entirely by the atomic layer deposition technique on rigid and flexible substrates at a low temperature of 160 °C. The transistors show high saturation mobility, large switching ratio, and small subthreshold swing value. The inverters and ring oscillators show large gain value and small propagation delay time, indicating the potential of this process in transparent electronic devices.

Original language	English (US)
Pages (from-to)	7736-7744
Number of pages	9
Journal	Advanced Materials
Volume	28
Issue number	35
DOIs	https://doi.org/10.1002/adma.201600503
State	Published - Jul 4 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: P.K.N. and Z.W. contributed equally to this work. H.N.A. and Z.W. thank Prof. Khaled Salama for several technical discussions specifically on ring oscillator design and measurement, and for developing the device models for our TFT process, which correctly predicted experimental ring oscillator results. Dr. Mrinal K. Hota, core laboratory staff, imaging and characterization staff of KAUST are also thanked for their useful help in the study. Research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST) under the Sensors Initiative.

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title = "Indium-Free Fully Transparent Electronics Deposited Entirely by Atomic Layer Deposition",

abstract = "Indium-free, fully transparent thin-film transistors are fabricated entirely by the atomic layer deposition technique on rigid and flexible substrates at a low temperature of 160 °C. The transistors show high saturation mobility, large switching ratio, and small subthreshold swing value. The inverters and ring oscillators show large gain value and small propagation delay time, indicating the potential of this process in transparent electronic devices.",

author = "Nayak, {Pradipta K.} and Zhenwei Wang and Alshareef, {Husam N.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: P.K.N. and Z.W. contributed equally to this work. H.N.A. and Z.W. thank Prof. Khaled Salama for several technical discussions specifically on ring oscillator design and measurement, and for developing the device models for our TFT process, which correctly predicted experimental ring oscillator results. Dr. Mrinal K. Hota, core laboratory staff, imaging and characterization staff of KAUST are also thanked for their useful help in the study. Research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST) under the Sensors Initiative.",

year = "2016",

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doi = "10.1002/adma.201600503",

language = "English (US)",

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AU - Alshareef, Husam N.

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N2 - Indium-free, fully transparent thin-film transistors are fabricated entirely by the atomic layer deposition technique on rigid and flexible substrates at a low temperature of 160 °C. The transistors show high saturation mobility, large switching ratio, and small subthreshold swing value. The inverters and ring oscillators show large gain value and small propagation delay time, indicating the potential of this process in transparent electronic devices.

AB - Indium-free, fully transparent thin-film transistors are fabricated entirely by the atomic layer deposition technique on rigid and flexible substrates at a low temperature of 160 °C. The transistors show high saturation mobility, large switching ratio, and small subthreshold swing value. The inverters and ring oscillators show large gain value and small propagation delay time, indicating the potential of this process in transparent electronic devices.

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JO - Advanced Materials

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Indium-Free Fully Transparent Electronics Deposited Entirely by Atomic Layer Deposition

Abstract

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