Indacenodithiophene semiconducting polymers for high-performance, air-stable transistors

Weimin Zhang, Jeremy Smith, Scott E. Watkins, Roman Gysel, Michael McGehee, Alberto Salleo, James Kirkpatrick, Shahid Ashraf, Thomas Anthopoulos, Martin Heeney, Iain McCulloch

Research output: Contribution to journalArticlepeer-review

490 Scopus citations


High-performance, solution-processed transistors fabricated from semiconducting polymers containing indacenodithiohene repeat units are described. The bridging functions on the backbone contribute to suppressing large-scale crystallization in thin films. However, charge carrier mobilities of up to 1 cm2/(V s) for a benzothiadiazole copolymer were reported and, coupled with both ambient stability and long-wavelength absorption, make this family of polymers particularly attractive for application in next-generation organic optoelectronics. © 2010 American Chemical Society.
Original languageEnglish (US)
Pages (from-to)11437-11439
Number of pages3
JournalJournal of the American Chemical Society
Issue number33
StatePublished - Aug 25 2010
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-02-14

ASJC Scopus subject areas

  • Biochemistry
  • Colloid and Surface Chemistry
  • Chemistry(all)
  • Catalysis


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