Indacenodithiophene semiconducting polymers for high-performance, air-stable transistors

Weimin Zhang*, Jeremy Smith, Scott E. Watkins, Roman Gysel, Michael McGehee, Alberto Salleo, James Kirkpatrick, Raja Ashraf, Thomas Anthopoulos, Martin Heeney, Iain Mcculloch

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

455 Scopus citations


High-performance, solution-processed transistors fabricated from semiconducting polymers containing indacenodithiohene repeat units are described. The bridging functions on the backbone contribute to suppressing large-scale crystallization in thin films. However, charge carrier mobilities of up to 1 cm2/(V s) for a benzothiadiazole copolymer were reported and, coupled with both ambient stability and long-wavelength absorption, make this family of polymers particularly attractive for application in next-generation organic optoelectronics.

Original languageEnglish (US)
Pages (from-to)11437-11439
Number of pages3
JournalJournal of the American Chemical Society
Issue number33
StatePublished - Aug 25 2010

ASJC Scopus subject areas

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry


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