Increased pressure digital metalorganic vapor phase epitaxy system with high-speed switching valves for growing high-In-content GaInN

Hiroshi Amano; Kensuke Nagata; Kentaro Nagamatsu; Daisuke Iida; Motoaki Iwaya; Satoshi Kamiyama; Isamu Akasaki

doi:10.1117/12.848616

Increased pressure digital metalorganic vapor phase epitaxy system with high-speed switching valves for growing high-In-content GaInN

Hiroshi Amano, Kensuke Nagata, Kentaro Nagamatsu, Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Increased-pressure metalorganic vapor phase epitaxy (MOVPE) system with high speed switching valves is found to be effective for growing In-rich GaInN at a high temperature. High-speed switching valves enable the atomic layer epitaxy of high quality AlGaN at a low temperature, by which we can grow thin AlGaN capping layer without the thermal decomposition of underlying In-rich GaInN. This new growth technology sheds light on the digital alloy growth for the development of high-efficiency nitride-based visible long -wavelength light emitters. © 2010 Copyright SPIE - The International Society for Optical Engineering.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
DOIs	https://doi.org/10.1117/12.848616
State	Published - May 5 2010
Externally published	Yes

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title = "Increased pressure digital metalorganic vapor phase epitaxy system with high-speed switching valves for growing high-In-content GaInN",

abstract = "Increased-pressure metalorganic vapor phase epitaxy (MOVPE) system with high speed switching valves is found to be effective for growing In-rich GaInN at a high temperature. High-speed switching valves enable the atomic layer epitaxy of high quality AlGaN at a low temperature, by which we can grow thin AlGaN capping layer without the thermal decomposition of underlying In-rich GaInN. This new growth technology sheds light on the digital alloy growth for the development of high-efficiency nitride-based visible long -wavelength light emitters. {\textcopyright} 2010 Copyright SPIE - The International Society for Optical Engineering.",

author = "Hiroshi Amano and Kensuke Nagata and Kentaro Nagamatsu and Daisuke Iida and Motoaki Iwaya and Satoshi Kamiyama and Isamu Akasaki",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-21",

year = "2010",

month = may,

day = "5",

doi = "10.1117/12.848616",

language = "English (US)",

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T1 - Increased pressure digital metalorganic vapor phase epitaxy system with high-speed switching valves for growing high-In-content GaInN

AU - Amano, Hiroshi

AU - Nagata, Kensuke

AU - Nagamatsu, Kentaro

AU - Iida, Daisuke

AU - Iwaya, Motoaki

AU - Kamiyama, Satoshi

AU - Akasaki, Isamu

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2010/5/5

Y1 - 2010/5/5

N2 - Increased-pressure metalorganic vapor phase epitaxy (MOVPE) system with high speed switching valves is found to be effective for growing In-rich GaInN at a high temperature. High-speed switching valves enable the atomic layer epitaxy of high quality AlGaN at a low temperature, by which we can grow thin AlGaN capping layer without the thermal decomposition of underlying In-rich GaInN. This new growth technology sheds light on the digital alloy growth for the development of high-efficiency nitride-based visible long -wavelength light emitters. © 2010 Copyright SPIE - The International Society for Optical Engineering.

AB - Increased-pressure metalorganic vapor phase epitaxy (MOVPE) system with high speed switching valves is found to be effective for growing In-rich GaInN at a high temperature. High-speed switching valves enable the atomic layer epitaxy of high quality AlGaN at a low temperature, by which we can grow thin AlGaN capping layer without the thermal decomposition of underlying In-rich GaInN. This new growth technology sheds light on the digital alloy growth for the development of high-efficiency nitride-based visible long -wavelength light emitters. © 2010 Copyright SPIE - The International Society for Optical Engineering.

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U2 - 10.1117/12.848616

DO - 10.1117/12.848616

M3 - Conference contribution

SN - 9780819480132

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Increased pressure digital metalorganic vapor phase epitaxy system with high-speed switching valves for growing high-In-content GaInN

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