Incorporation of N into GaAsN under N overpressure and underpressure conditions

Sun Zhongzhe; Yoon Soon Fatt; Yew Kuok Chuin; Loke Wan Khai; Fan Weijun; Wang Shanzhong; Ng Tien Khee

doi:10.1063/1.1582554

Incorporation of N into GaAsN under N overpressure and underpressure conditions

Sun Zhongzhe, Yoon Soon Fatt, Yew Kuok Chuin, Loke Wan Khai, Fan Weijun, Wang Shanzhong, Ng Tien Khee

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22 Scopus citations

Abstract

Incorporation of N into GaAsN under N overpressure and underpressure conditions was investigated. Molecular beam epitaxy equipped with a radio frequency nitrogen plasma source was used to grow GaAsN. Results showed that for the GaAsN grown at lower growth rate, the N concentration was influenced by the arsenic pressure.

Original language	English (US)
Pages (from-to)	1069-1073
Number of pages	5
Journal	Journal of Applied Physics
Volume	94
Issue number	2
DOIs	https://doi.org/10.1063/1.1582554
State	Published - Jul 15 2003
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Incorporation of N into GaAsN under N overpressure and underpressure conditions",

abstract = "Incorporation of N into GaAsN under N overpressure and underpressure conditions was investigated. Molecular beam epitaxy equipped with a radio frequency nitrogen plasma source was used to grow GaAsN. Results showed that for the GaAsN grown at lower growth rate, the N concentration was influenced by the arsenic pressure.",

author = "Sun Zhongzhe and Fatt, {Yoon Soon} and Chuin, {Yew Kuok} and Khai, {Loke Wan} and Fan Weijun and Wang Shanzhong and Khee, {Ng Tien}",

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AU - Zhongzhe, Sun

AU - Fatt, Yoon Soon

AU - Chuin, Yew Kuok

AU - Khai, Loke Wan

AU - Weijun, Fan

AU - Shanzhong, Wang

AU - Khee, Ng Tien

PY - 2003/7/15

Y1 - 2003/7/15

N2 - Incorporation of N into GaAsN under N overpressure and underpressure conditions was investigated. Molecular beam epitaxy equipped with a radio frequency nitrogen plasma source was used to grow GaAsN. Results showed that for the GaAsN grown at lower growth rate, the N concentration was influenced by the arsenic pressure.

AB - Incorporation of N into GaAsN under N overpressure and underpressure conditions was investigated. Molecular beam epitaxy equipped with a radio frequency nitrogen plasma source was used to grow GaAsN. Results showed that for the GaAsN grown at lower growth rate, the N concentration was influenced by the arsenic pressure.

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DO - 10.1063/1.1582554

M3 - Article

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EP - 1073

JO - Journal of Applied Physics

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IS - 2

ER -

Incorporation of N into GaAsN under N overpressure and underpressure conditions

Abstract

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