InAs/InP quantum-dash lasers

M. Z.M. Khan; E. A. Alkhazraji; M. T.A. Khan; Tien Khee Ng; Boon S. Ooi

doi:10.1016/B978-0-12-814162-5.00005-4

InAs/InP quantum-dash lasers

M. Z.M. Khan, E. A. Alkhazraji, M. T.A. Khan, Tien Khee Ng, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceeding › Chapter

2 Scopus citations

Abstract

This chapter introduces a new class of InAs/InP based ultra-broadband Quantum-dash (Qdash) lasers. It starts by presenting the perspective of its broadband & inhomogeneous nature and the potential in energy efficient optical communication. Firstly, the epitaxial growth of InAs/InP Qdash material system and various works on optimization is discussed. Then, device level characterization of InAs/InP Qdash Fabry-Perot lasers with chronological improvement in their performance is underlined, in particular employment of assisting injection and mode locking techniques. The chapter concludes by summarizing various demonstrations of C- and L-band Qdash laser diode as a cohesive light source in wavelength division multiplexed optical communication system, and unified transmitter source for next generation optical access networks.

Original language	English (US)
Title of host publication	Nanoscale Semiconductor Lasers
Publisher	Elsevier
Pages	109-138
Number of pages	30
ISBN (Print)	9780128141625
DOIs	https://doi.org/10.1016/B978-0-12-814162-5.00005-4
State	Published - Aug 9 2019

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1614-01-01, GEN/1/6607-01-01, KAUST004, KCR/1/2081-01-01, REP/1/2878-01-01
Acknowledgements: Authors EAA, MTAK and MZMK gratefully acknowledges the support from King Fahd University of Petroleum and Minerals (KFUPM) grants, SR141002, SR161029 and KAUST004, while TKN, MZMK, and BSO acknowledge the financial support from the King Abdulaziz
City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. King Abdullah University of Science and Technology (KAUST) funding, BAS/1/1614-01-01, C/M20000-12-001-77. KCR/1/2081-01-01, and GEN/1/6607-01-01. All the authors acknowledge
the funding support from KAUST-KFUPM Special Initiative (KKI) Program, EE2381 and REP/1/2878-01-01

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10.1016/B978-0-12-814162-5.00005-4

https://repository.kaust.edu.sa/bitstream/10754/662171/1/3-s2.0-B9780128141625000054-main.pdf

Cite this

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title = "InAs/InP quantum-dash lasers",

abstract = "This chapter introduces a new class of InAs/InP based ultra-broadband Quantum-dash (Qdash) lasers. It starts by presenting the perspective of its broadband & inhomogeneous nature and the potential in energy efficient optical communication. Firstly, the epitaxial growth of InAs/InP Qdash material system and various works on optimization is discussed. Then, device level characterization of InAs/InP Qdash Fabry-Perot lasers with chronological improvement in their performance is underlined, in particular employment of assisting injection and mode locking techniques. The chapter concludes by summarizing various demonstrations of C- and L-band Qdash laser diode as a cohesive light source in wavelength division multiplexed optical communication system, and unified transmitter source for next generation optical access networks.",

author = "Khan, {M. Z.M.} and Alkhazraji, {E. A.} and Khan, {M. T.A.} and Ng, {Tien Khee} and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01, GEN/1/6607-01-01, KAUST004, KCR/1/2081-01-01, REP/1/2878-01-01 Acknowledgements: Authors EAA, MTAK and MZMK gratefully acknowledges the support from King Fahd University of Petroleum and Minerals (KFUPM) grants, SR141002, SR161029 and KAUST004, while TKN, MZMK, and BSO acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. King Abdullah University of Science and Technology (KAUST) funding, BAS/1/1614-01-01, C/M20000-12-001-77. KCR/1/2081-01-01, and GEN/1/6607-01-01. All the authors acknowledge the funding support from KAUST-KFUPM Special Initiative (KKI) Program, EE2381 and REP/1/2878-01-01",

year = "2019",

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doi = "10.1016/B978-0-12-814162-5.00005-4",

language = "English (US)",

isbn = "9780128141625",

pages = "109--138",

booktitle = "Nanoscale Semiconductor Lasers",

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AU - Alkhazraji, E. A.

AU - Khan, M. T.A.

AU - Ng, Tien Khee

AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01, GEN/1/6607-01-01, KAUST004, KCR/1/2081-01-01, REP/1/2878-01-01 Acknowledgements: Authors EAA, MTAK and MZMK gratefully acknowledges the support from King Fahd University of Petroleum and Minerals (KFUPM) grants, SR141002, SR161029 and KAUST004, while TKN, MZMK, and BSO acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. King Abdullah University of Science and Technology (KAUST) funding, BAS/1/1614-01-01, C/M20000-12-001-77. KCR/1/2081-01-01, and GEN/1/6607-01-01. All the authors acknowledge the funding support from KAUST-KFUPM Special Initiative (KKI) Program, EE2381 and REP/1/2878-01-01

PY - 2019/8/9

Y1 - 2019/8/9

N2 - This chapter introduces a new class of InAs/InP based ultra-broadband Quantum-dash (Qdash) lasers. It starts by presenting the perspective of its broadband & inhomogeneous nature and the potential in energy efficient optical communication. Firstly, the epitaxial growth of InAs/InP Qdash material system and various works on optimization is discussed. Then, device level characterization of InAs/InP Qdash Fabry-Perot lasers with chronological improvement in their performance is underlined, in particular employment of assisting injection and mode locking techniques. The chapter concludes by summarizing various demonstrations of C- and L-band Qdash laser diode as a cohesive light source in wavelength division multiplexed optical communication system, and unified transmitter source for next generation optical access networks.

AB - This chapter introduces a new class of InAs/InP based ultra-broadband Quantum-dash (Qdash) lasers. It starts by presenting the perspective of its broadband & inhomogeneous nature and the potential in energy efficient optical communication. Firstly, the epitaxial growth of InAs/InP Qdash material system and various works on optimization is discussed. Then, device level characterization of InAs/InP Qdash Fabry-Perot lasers with chronological improvement in their performance is underlined, in particular employment of assisting injection and mode locking techniques. The chapter concludes by summarizing various demonstrations of C- and L-band Qdash laser diode as a cohesive light source in wavelength division multiplexed optical communication system, and unified transmitter source for next generation optical access networks.

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SP - 109

EP - 138

BT - Nanoscale Semiconductor Lasers

PB - Elsevier

ER -

InAs/InP quantum-dash lasers

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