InAs/InAlGaAs quantum dot-on-silicon microdisk lasers operating at 1.55 μm

Bei Shi; Si Zhu; Qiang Li; Yating Wan; Evelyn L. Hu; Kei May Lau

doi:10.1364/CLEO_SI.2017.SW4C.2

InAs/InAlGaAs quantum dot-on-silicon microdisk lasers operating at 1.55 μm

Bei Shi, Si Zhu, Qiang Li, Yating Wan, Evelyn L. Hu, Kei May Lau

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

InAs/InAlGaAs quantum dot microdisk lasers were epitaxially grown on Si (001) substrates by MOCVD. CW lasing at 1544 nm was achieved at 4.5 K, with a low threshold of 230 μW and quality factor of 2200.

Original language	English (US)
Title of host publication	2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-2
Number of pages	2
ISBN (Print)	9781943580279
DOIs	https://doi.org/10.1364/CLEO_SI.2017.SW4C.2
State	Published - Oct 25 2017
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2023-09-18

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10.1364/CLEO_SI.2017.SW4C.2

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title = "InAs/InAlGaAs quantum dot-on-silicon microdisk lasers operating at 1.55 μm",

abstract = "InAs/InAlGaAs quantum dot microdisk lasers were epitaxially grown on Si (001) substrates by MOCVD. CW lasing at 1544 nm was achieved at 4.5 K, with a low threshold of 230 μW and quality factor of 2200.",

author = "Bei Shi and Si Zhu and Qiang Li and Yating Wan and Hu, {Evelyn L.} and Lau, {Kei May}",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-18",

year = "2017",

month = oct,

day = "25",

doi = "10.1364/CLEO_SI.2017.SW4C.2",

language = "English (US)",

isbn = "9781943580279",

pages = "1--2",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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}

TY - GEN

T1 - InAs/InAlGaAs quantum dot-on-silicon microdisk lasers operating at 1.55 μm

AU - Shi, Bei

AU - Zhu, Si

AU - Li, Qiang

AU - Wan, Yating

AU - Hu, Evelyn L.

AU - Lau, Kei May

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2017/10/25

Y1 - 2017/10/25

N2 - InAs/InAlGaAs quantum dot microdisk lasers were epitaxially grown on Si (001) substrates by MOCVD. CW lasing at 1544 nm was achieved at 4.5 K, with a low threshold of 230 μW and quality factor of 2200.

AB - InAs/InAlGaAs quantum dot microdisk lasers were epitaxially grown on Si (001) substrates by MOCVD. CW lasing at 1544 nm was achieved at 4.5 K, with a low threshold of 230 μW and quality factor of 2200.

UR - https://opg.optica.org/abstract.cfm?URI=CLEO_SI-2017-SW4C.2

UR - http://www.scopus.com/inward/record.url?scp=85044190584&partnerID=8YFLogxK

U2 - 10.1364/CLEO_SI.2017.SW4C.2

DO - 10.1364/CLEO_SI.2017.SW4C.2

M3 - Conference contribution

SN - 9781943580279

SP - 1

EP - 2

BT - 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

InAs/InAlGaAs quantum dot-on-silicon microdisk lasers operating at 1.55 μm

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