InAs/GaAs quantum dots on GaAs-on-V-grooved-Si substrate with high optical quality in the 1.3 μ m band

Yating Wan; Qiang Li; Yu Geng; Bei Shi; Kei May Lau

doi:10.1063/1.4929441

InAs/GaAs quantum dots on GaAs-on-V-grooved-Si substrate with high optical quality in the 1.3 μ m band

Yating Wan, Qiang Li, Yu Geng, Bei Shi, Kei May Lau

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

We report self-assembled InAs/GaAs quantum dots (QDs) grown on a specially engineered GaAs-on-V-grooved-Si substrate by metal-organic vapor phase epitaxy. Recessed pockets formed on V-groove patterned Si (001) substrates were used to prevent most of the hetero-interfacial stacking faults from extending into the upper QD active region. 1.3μm room temperature emission from high-density (5.6×1010cm-2) QDs has been obtained, with a narrow full-width-at-half-maximum of 29meV. Optical quality of the QDs was found to be better than those grown on conventional planar offcut Si templates, as indicated by temperature-dependent photoluminescence analysis. Results suggest great potential to integrate QD lasers on a Si complementary-metal-oxide-semiconductor compatible platform using such GaAs on Si templates.

Original language	English (US)
Journal	Applied Physics Letters
Volume	107
Issue number	8
DOIs	https://doi.org/10.1063/1.4929441
State	Published - Aug 24 2015
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2023-09-18

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "InAs/GaAs quantum dots on GaAs-on-V-grooved-Si substrate with high optical quality in the 1.3 μ m band",

abstract = "We report self-assembled InAs/GaAs quantum dots (QDs) grown on a specially engineered GaAs-on-V-grooved-Si substrate by metal-organic vapor phase epitaxy. Recessed pockets formed on V-groove patterned Si (001) substrates were used to prevent most of the hetero-interfacial stacking faults from extending into the upper QD active region. 1.3μm room temperature emission from high-density (5.6×1010cm-2) QDs has been obtained, with a narrow full-width-at-half-maximum of 29meV. Optical quality of the QDs was found to be better than those grown on conventional planar offcut Si templates, as indicated by temperature-dependent photoluminescence analysis. Results suggest great potential to integrate QD lasers on a Si complementary-metal-oxide-semiconductor compatible platform using such GaAs on Si templates.",

author = "Yating Wan and Qiang Li and Yu Geng and Bei Shi and Lau, {Kei May}",

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T1 - InAs/GaAs quantum dots on GaAs-on-V-grooved-Si substrate with high optical quality in the 1.3 μ m band

AU - Wan, Yating

AU - Li, Qiang

AU - Geng, Yu

AU - Shi, Bei

AU - Lau, Kei May

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2015/8/24

Y1 - 2015/8/24

N2 - We report self-assembled InAs/GaAs quantum dots (QDs) grown on a specially engineered GaAs-on-V-grooved-Si substrate by metal-organic vapor phase epitaxy. Recessed pockets formed on V-groove patterned Si (001) substrates were used to prevent most of the hetero-interfacial stacking faults from extending into the upper QD active region. 1.3μm room temperature emission from high-density (5.6×1010cm-2) QDs has been obtained, with a narrow full-width-at-half-maximum of 29meV. Optical quality of the QDs was found to be better than those grown on conventional planar offcut Si templates, as indicated by temperature-dependent photoluminescence analysis. Results suggest great potential to integrate QD lasers on a Si complementary-metal-oxide-semiconductor compatible platform using such GaAs on Si templates.

AB - We report self-assembled InAs/GaAs quantum dots (QDs) grown on a specially engineered GaAs-on-V-grooved-Si substrate by metal-organic vapor phase epitaxy. Recessed pockets formed on V-groove patterned Si (001) substrates were used to prevent most of the hetero-interfacial stacking faults from extending into the upper QD active region. 1.3μm room temperature emission from high-density (5.6×1010cm-2) QDs has been obtained, with a narrow full-width-at-half-maximum of 29meV. Optical quality of the QDs was found to be better than those grown on conventional planar offcut Si templates, as indicated by temperature-dependent photoluminescence analysis. Results suggest great potential to integrate QD lasers on a Si complementary-metal-oxide-semiconductor compatible platform using such GaAs on Si templates.

UR - https://pubs.aip.org/apl/article/107/8/081106/30821/InAs-GaAs-quantum-dots-on-GaAs-on-V-grooved-Si

UR - http://www.scopus.com/inward/record.url?scp=84940118228&partnerID=8YFLogxK

U2 - 10.1063/1.4929441

DO - 10.1063/1.4929441

M3 - Article

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

InAs/GaAs quantum dots on GaAs-on-V-grooved-Si substrate with high optical quality in the 1.3 μ m band

Abstract

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