InAs/GaAs quantum dot lasers on exact GaP/Si (001) and other templates

J. E. Bowers, A. Y. Liu, D. Jung, J. Norman, A. C. Gossard, Y. Wan, Q. Li, K. M. Lau, M. L. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We demonstrate InAs quantum dot (QD) laser diodes epitaxially grown on exact (001) Si substrates by molecular beam epitaxy. Intentional 4-6 ° offcut substrates have been traditionally employed to avoid formations that stem from the interface between III-V and Si. However, offcut substrates are not fully compatible with the standard CMOS processing. In this work, we employed on-axis GaP/Si and V-groove Si substrates to enable high performance QD laser diodes with output power of more than ∼100 mW and continuous wave (CW) threshold current of ∼30 mA at room temperature (RT).
Original languageEnglish (US)
Title of host publicationCS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology
PublisherCS Mantech
StatePublished - Jan 1 2017
Externally publishedYes

Bibliographical note

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