Abstract
We present recent progress in performance and reliability of InAs quantum dot lasers epitaxially grown on (001) on-axis silicon. Fabry-Perot lasers show low threshold current densities (185 mW) and extrapolated lifetimes more than 10 million hours.
Original language | English (US) |
---|---|
Title of host publication | IEEE International Conference on Group IV Photonics GFP |
Publisher | IEEE Computer [email protected] |
ISBN (Print) | 9781538653616 |
DOIs | |
State | Published - Oct 1 2018 |
Externally published | Yes |