InAs Quantum dot Lasers Epitaxially Grown on On-Axis (001) Silicon

Daehwan Jung, Justin Norman, Yating Wan, Songtao Liu, Robert Herrick, Arthur Gossard, John Bowers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present recent progress in performance and reliability of InAs quantum dot lasers epitaxially grown on (001) on-axis silicon. Fabry-Perot lasers show low threshold current densities (185 mW) and extrapolated lifetimes more than 10 million hours.
Original languageEnglish (US)
Title of host publicationIEEE International Conference on Group IV Photonics GFP
PublisherIEEE Computer Societyhelp@computer.org
ISBN (Print)9781538653616
DOIs
StatePublished - Oct 1 2018
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-18

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