We report the growth and characterization of InAlGaAs/InAlAs multiquantum wells (MQWs) emitting at $\sim 1310$-nm grown on silicon by organometallic vapor phase epitaxy. Compared with the same structure grown on a reference planar InP substrate, photoluminescence of the MQWs on Si shows both comparable line widths and internal quantum efficiencies at room temperature. A specially engineered InP buffer with interlayers on a nanopatterned silicon substrate was used. Cross-sectional transmission electron microscopy reveals effective dislocation filtering by the three strained InGaAs interlayers. The high-quality quantum-well structure grown on the InP-on-Si template suggests great potential of integrating III-V photonic devices on the Si platform.
Bibliographical noteGenerated from Scopus record by KAUST IRTS on 2023-09-18
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering