InAlGaAs/InAlAs MQWs on Si substrate

Bei Shi, Qiang Li, Yating Wan, Kar Wei Ng, Xinbo Zou, Chak Wah Tang, Kei May Lau

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


We report the growth and characterization of InAlGaAs/InAlAs multiquantum wells (MQWs) emitting at $\sim 1310$-nm grown on silicon by organometallic vapor phase epitaxy. Compared with the same structure grown on a reference planar InP substrate, photoluminescence of the MQWs on Si shows both comparable line widths and internal quantum efficiencies at room temperature. A specially engineered InP buffer with interlayers on a nanopatterned silicon substrate was used. Cross-sectional transmission electron microscopy reveals effective dislocation filtering by the three strained InGaAs interlayers. The high-quality quantum-well structure grown on the InP-on-Si template suggests great potential of integrating III-V photonic devices on the Si platform.
Original languageEnglish (US)
Pages (from-to)748-751
Number of pages4
JournalIEEE Photonics Technology Letters
Issue number7
StatePublished - Apr 1 2015
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-18

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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