TY - JOUR
T1 - In situ X-ray diffraction monitoring of GaInN/GaN superlattice during organometalic vapor phase epitaxy growth
AU - Yamamoto, Taiji
AU - Iida, Daisuke
AU - Kondo, Yasunari
AU - Sowa, Mihoko
AU - Umeda, Shinya
AU - Iwaya, Motoaki
AU - Takeuchi, Tetsuya
AU - Kamiyama, Satoshi
AU - Akasaki, Isamu
N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21
PY - 2014/5/1
Y1 - 2014/5/1
N2 - We observed the growth of the Ga0.80In0.20N (2 nm)/GaN (3 nm) superlattice (SL) structure by in situ X-ray diffraction (XRD) monitoring. The satellite peaks from the -1st to the +1st order can be obtained from these in situ XRD spectrums. From the full width at half maximums (FWHMs) of the 0th and -1st satellite peaks as a function of the SL periods, we observed a clear trend in each FWHM. It was found that by analyzing this trend along with florescence microscopic and transmission electron microscopic analysis, an analysis of the In segregation and misfit dislocation are possible. Accordingly, if we employ in situ XRD under various growth conditions, the optimization of the growth conditions will become easier because it would be possible to determine the number of periods at which In segregation and misfit dislocation increases by only one growth procedure. © 2013 Elsevier B.V.
AB - We observed the growth of the Ga0.80In0.20N (2 nm)/GaN (3 nm) superlattice (SL) structure by in situ X-ray diffraction (XRD) monitoring. The satellite peaks from the -1st to the +1st order can be obtained from these in situ XRD spectrums. From the full width at half maximums (FWHMs) of the 0th and -1st satellite peaks as a function of the SL periods, we observed a clear trend in each FWHM. It was found that by analyzing this trend along with florescence microscopic and transmission electron microscopic analysis, an analysis of the In segregation and misfit dislocation are possible. Accordingly, if we employ in situ XRD under various growth conditions, the optimization of the growth conditions will become easier because it would be possible to determine the number of periods at which In segregation and misfit dislocation increases by only one growth procedure. © 2013 Elsevier B.V.
UR - https://linkinghub.elsevier.com/retrieve/pii/S0022024813008269
UR - http://www.scopus.com/inward/record.url?scp=84897998786&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2013.11.072
DO - 10.1016/j.jcrysgro.2013.11.072
M3 - Article
SN - 0022-0248
VL - 393
SP - 108
EP - 113
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -