Abstract
The unique possibilities of Current-Voltage (I-V) and Force-Displacement (F-D) curve recordings from individual lD-nanostructures inside high-resolution transmission electron microscopes are demonstrated. The examples include Ga-filled MgO, In-filled SiO2 and pure multi-walled BN nanotubes.
Original language | English (US) |
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Title of host publication | 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 |
Pages | 1127-1131 |
Number of pages | 5 |
DOIs | |
State | Published - 2008 |
Externally published | Yes |
Event | 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 - Shanghai, China Duration: Mar 24 2008 → Mar 27 2008 |
Other
Other | 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 |
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Country/Territory | China |
City | Shanghai |
Period | 03/24/08 → 03/27/08 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering