TY - GEN
T1 - In-situ TEM characterization of nanomaterials and devices
AU - Kim, Moon
AU - Park, Seongyong
AU - Cha, Dong Kyu
AU - Kim, Jiyoung
AU - Floresca, Herman Carlo
AU - Lu, Ning
AU - Wang, Jinguo
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2011/10
Y1 - 2011/10
N2 - Electrical properties of nano size devices were directly measured by TEM. Real time observation of phase transition behavior in PRAM revealed that the volume of the crystalline phase is the main factor in determining cell resistance. In the transistor device, we have identified the doping type and area by measuring the I-V curve at the individual nano contact on the specimen. The evolution of the graphene edge structure was controlled and monitored at and up to 1200°C in-situ. © 2011 IEEE.
AB - Electrical properties of nano size devices were directly measured by TEM. Real time observation of phase transition behavior in PRAM revealed that the volume of the crystalline phase is the main factor in determining cell resistance. In the transistor device, we have identified the doping type and area by measuring the I-V curve at the individual nano contact on the specimen. The evolution of the graphene edge structure was controlled and monitored at and up to 1200°C in-situ. © 2011 IEEE.
UR - http://hdl.handle.net/10754/564442
UR - http://ieeexplore.ieee.org/document/6155318/
UR - http://www.scopus.com/inward/record.url?scp=84860470857&partnerID=8YFLogxK
U2 - 10.1109/NMDC.2011.6155318
DO - 10.1109/NMDC.2011.6155318
M3 - Conference contribution
SN - 9781457721397
SP - 86
EP - 89
BT - 2011 IEEE Nanotechnology Materials and Devices Conference
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -