In Situ Plasma-Grown Silicon-Oxide for Polysilicon Passivating Contacts

Areej A. Alzahrani; Thomas Allen; Michele de Bastiani; Emmanuel Van Kerschaver; George T. Harrison; Wenzhu Liu; Stefaan De Wolf

doi:10.1002/admi.202000589

In Situ Plasma-Grown Silicon-Oxide for Polysilicon Passivating Contacts

Areej A. Alzahrani, Thomas Allen, Michele de Bastiani, Emmanuel Van Kerschaver, George T. Harrison, Wenzhu Liu, Stefaan De Wolf

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Large-scale manufacturing of polysilicon-based passivating contacts for high-efficiency crystalline silicon (c-Si) solar cells demands simple fabrication of thermally stable SiOx films with well controlled microstructure and nanoscale thickness to enable quantum-mechanical tunneling. Here, plasma-dissociated CO2 is investigated to grow in situ thin (

Original language	English (US)
Pages (from-to)	2000589
Journal	Advanced Materials Interfaces
DOIs	https://doi.org/10.1002/admi.202000589
State	Published - Jul 29 2020

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): OSR-CRG URF/1/3383
Acknowledgements: The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award no. OSR-CRG URF/1/3383.

Access to Document

10.1002/admi.202000589

Cite this

@article{0cb4f714caf34e26ae15d7ce3090455b,

title = "In Situ Plasma-Grown Silicon-Oxide for Polysilicon Passivating Contacts",

abstract = "Large-scale manufacturing of polysilicon-based passivating contacts for high-efficiency crystalline silicon (c-Si) solar cells demands simple fabrication of thermally stable SiOx films with well controlled microstructure and nanoscale thickness to enable quantum-mechanical tunneling. Here, plasma-dissociated CO2 is investigated to grow in situ thin (",

author = "Alzahrani, {Areej A.} and Thomas Allen and {de Bastiani}, Michele and {Van Kerschaver}, Emmanuel and Harrison, {George T.} and Wenzhu Liu and {De Wolf}, Stefaan",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): OSR-CRG URF/1/3383 Acknowledgements: The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award no. OSR-CRG URF/1/3383.",

year = "2020",

month = jul,

day = "29",

doi = "10.1002/admi.202000589",

language = "English (US)",

pages = "2000589",

journal = "Advanced Materials Interfaces",

issn = "2196-7350",

publisher = "Wiley",

}

TY - JOUR

T1 - In Situ Plasma-Grown Silicon-Oxide for Polysilicon Passivating Contacts

AU - Alzahrani, Areej A.

AU - Allen, Thomas

AU - de Bastiani, Michele

AU - Van Kerschaver, Emmanuel

AU - Harrison, George T.

AU - Liu, Wenzhu

AU - De Wolf, Stefaan

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): OSR-CRG URF/1/3383 Acknowledgements: The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award no. OSR-CRG URF/1/3383.

PY - 2020/7/29

Y1 - 2020/7/29

N2 - Large-scale manufacturing of polysilicon-based passivating contacts for high-efficiency crystalline silicon (c-Si) solar cells demands simple fabrication of thermally stable SiOx films with well controlled microstructure and nanoscale thickness to enable quantum-mechanical tunneling. Here, plasma-dissociated CO2 is investigated to grow in situ thin (

AB - Large-scale manufacturing of polysilicon-based passivating contacts for high-efficiency crystalline silicon (c-Si) solar cells demands simple fabrication of thermally stable SiOx films with well controlled microstructure and nanoscale thickness to enable quantum-mechanical tunneling. Here, plasma-dissociated CO2 is investigated to grow in situ thin (

UR - http://hdl.handle.net/10754/664514

UR - https://onlinelibrary.wiley.com/doi/abs/10.1002/admi.202000589

UR - http://www.scopus.com/inward/record.url?scp=85088571675&partnerID=8YFLogxK

U2 - 10.1002/admi.202000589

DO - 10.1002/admi.202000589

M3 - Article

SN - 2196-7350

SP - 2000589

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

ER -

In Situ Plasma-Grown Silicon-Oxide for Polysilicon Passivating Contacts

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this