In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

S. R. Sarath Kumar; Pradipta K. Nayak; Mohamed N. Hedhili; Yasser Khan; Husam N. Alshareef

doi:10.1063/1.4829356

In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

S. R. Sarath Kumar, Pradipta K. Nayak, Mohamed N. Hedhili, Yasser Khan, Husam N. Alshareef

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films.

Original language	English (US)
Pages (from-to)	192109
Journal	Applied Physics Letters
Volume	103
Issue number	19
DOIs	https://doi.org/10.1063/1.4829356
State	Published - Nov 7 2013

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KAUST Repository Item: Exported on 2020-10-01

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition",

abstract = "We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films.",

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AU - Sarath Kumar, S. R.

AU - Nayak, Pradipta K.

AU - Hedhili, Mohamed N.

AU - Khan, Yasser

AU - Alshareef, Husam N.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2013/11/7

Y1 - 2013/11/7

N2 - We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films.

AB - We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films.

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M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

Abstract

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