In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

S. R. Sarath Kumar, Pradipta K. Nayak, Mohamed N. Hedhili, Yasser Khan, Husam N. Alshareef

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17 Scopus citations


We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films.
Original languageEnglish (US)
Pages (from-to)192109
JournalApplied Physics Letters
Issue number19
StatePublished - Nov 7 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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