In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random-Access Memories

Yuanyuan Shi; Yanfeng Ji; Fei Hui; Montserrat Nafria; Marc Porti; Gennadi Bersuker; Mario Lanza

doi:10.1002/aelm.201400058

In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random-Access Memories

Yuanyuan Shi, Yanfeng Ji, Fei Hui, Montserrat Nafria, Marc Porti, Gennadi Bersuker, Mario Lanza

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Journal	Advanced Electronic Materials
Volume	1
Issue number	4
DOIs	https://doi.org/10.1002/aelm.201400058
State	Published - Apr 1 2015
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2021-03-16

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10.1002/aelm.201400058

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title = "In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random-Access Memories",

author = "Yuanyuan Shi and Yanfeng Ji and Fei Hui and Montserrat Nafria and Marc Porti and Gennadi Bersuker and Mario Lanza",

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AU - Shi, Yuanyuan

AU - Ji, Yanfeng

AU - Hui, Fei

AU - Nafria, Montserrat

AU - Porti, Marc

AU - Bersuker, Gennadi

AU - Lanza, Mario

N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16

PY - 2015/4/1

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VL - 1

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

IS - 4

ER -

In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random-Access Memories

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