In-situ CdS/CdTe Heterojuntions Deposited by Pulsed Laser Deposition

Jesus Avila-Avendano, Israel Mejia, Husam N. Alshareef, Zaibing Guo, Chadwin Young, Manuel A. Quevedo-Lopez

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


In this paper pulsed laser deposition (PLD) methods are used to study p-n CdTe/CdS heterojunctions fabricated in-situ. In-situ film deposition allows higher quality p-n interfaces by minimizing spurious contamination from the atmosphere. Morphologic and structural analyses were carried for CdTe films deposited on various substrates and different deposition conditions. The electrical characteristics and performance of the resulting p-n heterojunctions were studied as function of substrate and post-deposition anneal temperature. In-situ growth results on diodes with a rectification factor of ~ 105, an ideality factor < 2, and a reverse saturation current ~ 10-8 A. The carrier concentration in the CdTe film was in the range of ~ 1015 cm-3, as measured by C-V methods. The possible impact of sulfur diffusion from the CdS into the CdTe film is also investigated using High Resolution Rutherford Back-Scattering.
Original languageEnglish (US)
Pages (from-to)1-7
Number of pages7
JournalThin Solid Films
StatePublished - Apr 10 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Author would like to thank CONACYT for partial financial support for this project.

ASJC Scopus subject areas

  • Materials Chemistry
  • Surfaces and Interfaces
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Metals and Alloys


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